Preparation and characterization of electrodeposited indium selenide thin films

ABSTACT. This research deals with the study of the structural andoptical properties of NiO and Zn doped NiO nano films with different ratios (0.01,0.05,0. 1mol %). NiO nano films in thickness 100nm were deposited on a glass substrate using sol-gel spin coating technique. XRD results indicated that the films are polycrystalline and have cubic structure with a preferred orientation along (111). The average grain sizes of the crystallites estimated from XRD data was found to lie in the range of 19. 11 -25.05 nm. Data of AFM indicate that the surface of films is smooth.The optical transmittance value of nano NiO film reaches to 94% in the VIS and NIR regions, while it is value of films deposited with 0.1mol%Zn reaches to (91)% which is important for its applications as window layers in solar cells. The values of optical energy gap of NiO and Zn doping by 0.01,0.05,and 0. 1 mol % were equal to 3.73, and 3.58,3.42, 3.41 eV respectively.

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“…From the crystallite size calculations calculated the dislocation density (δ) by using the relation [9]:…”

Section: Basic Relationsmentioning

confidence: 99%

Effect of Zn Doping on Structural and some Optical Studies of Nano NiO Films Prepared by Sol-Gel Technique

Hashim

Sami

2015

ILCPA

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“…This material is widely researched for its application especially in photovoltaic devices fabrication [1,2]. In x Se y has been used either as a window layer [3] in In 2 Se 3 /CIS as well as an absorber layer [4,5] in CdS/In 2 Se 3 solar cells.…”

Section: Introductionmentioning

confidence: 99%

Preparation of indium selenide thin film by electrochemical technique

Madugu

Bowen

Echendu

et al. 2014

J Mater Sci: Mater Electron

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Indium Selenide (In x Se y ) layers were potentiostatically deposited on glass/fluorine-doped tin oxide (FTO) substrates, using electro-chemical technique from aqueous solution containing 0.10 M InCl 3 and 0.02 M SeO 2 . The electrodeposits were characterised using a wide range of analytical techniques; X-ray diffraction (XRD), scanning electron microscopy (SEM), Atomic force microscopy (AFM), optical absorption and photoelectrochemical (PEC) cell, for their structural, morphological, optical and electrical properties. The XRD show that the prepared films consist of mixed phases of InSe and In 2 Se 3 . The films grown at all voltages in this work were p type in electrical conduction, with bandgaps in the range of (1.70-1.80) eV in both as-deposited and heat-treated forms. The wetting property of In x Se y on glass/FTO surfaces indicates that In x Se y layers can be helpful as buffer layers or window layers in thin film solar cell development due to their ability to uniformly cover the substrate. The crosssection morphology show smoothening effect of these layers. The experimental results to date are presented in this paper.

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“…1a-c) reveals the existence of a CdSe (002) diffraction peak at 2θ = 25.4° for undoped CdSe film with hexagonal structure. For In doped CdSe films with In = 25 %, 50 %, 75% only CdSe diffraction peak was observed, indicating that even in these very high ratios of CdSe and In cations, formation of secondary phases like InSe or In 2 Se 3 was not observed [14]. It is observed from figure 1b and c that higher Indium doping shifts the peak angle to higher side along with the broadening of the peaks.…”

Section: Resultsmentioning

confidence: 63%

Structural, optical, electrical and luminescence properties of electron beam evaporated CdSe:In films

Basheer¹,

Rajni

Vidhya

et al. 2011

Cryst. Res. Technol.

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CdSe:In films were prepared by electron beam evaporation technique using CdSe and In 2 Se 3 (purity ~99.9%) pellets. The crystal structure of the films with and without Indium, measured by X-ray diffraction (XRD), showed a typical wurtzite structure, higher Indium doping shifts the peak angle to higher side along with the broadening of the peaks. X-ray photoelectron spectroscopy (XPS) studies indicated binding energies corresponding to 54 eV (Se 3d 5/2 ), 444 eV (In 3d 5/2 ), 411 eV (Cd 3d 3/2 ), (Cd 3d 5/2 ). Atomic force microscope (AFM) studies indicated a uniform surface.The grain size decreases with increase of In doping. A decrease in the band gap was observed with increase of dopant concentration. Resistivity of the films is in the range of 10 -3 Ωcm. Carrier density was in the range of 10 21 cm -3 for the films. The photolumineasenec spectra (PL) spectra indicated three peaks. The peak intensity decreases as the Indium concentration increases.

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Preparation and characterization of electrodeposited indium selenide thin films

Cited by 51 publications

References 15 publications

Effect of Zn Doping on Structural and some Optical Studies of Nano NiO Films Prepared by Sol-Gel Technique

Effect of Zn Doping on Structural and some Optical Studies of Nano NiO Films Prepared by Sol-Gel Technique

Preparation of indium selenide thin film by electrochemical technique

Structural, optical, electrical and luminescence properties of electron beam evaporated CdSe:In films

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