Structural properties of Cu(In,Ga)Se2 thin films prepared from chemically processed precursor layers

Hibberd, Christopher J.; Ganchev, M.; Kaelin, M.; Dann, Sandra E.; Bilger, G.; Upadhyaya, Hari M.; Tiwari, Ayodhya N.

doi:10.1016/j.tsf.2008.10.094

Cited by 10 publications

(3 citation statements)

References 19 publications

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“…2, indicating good crystalline quality. The (112) peak is slightly shifted towards smaller angle in agreement with the stoichiometry of CuIn0.7Ga0.3Se2 [13]. Using the Scherrer equation, a crystal size of 40 nm was calculated.…”

Section: Resultssupporting

confidence: 69%

SYSTEMATIZED AND SIMPLIFIED PROCESSING OF CuInGaSe2 THIN FILMS TO BE APPLIED ON SOLAR CELLS

Sastré-Hernández¹,

Mendoza-Pérez²,

Albor-Aguilera³

et al. 2020

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Results of processing and characterization of Cu(In,Ga)Se2 (CIGS) thin films growth by thermal co-evaporation with adequate physical properties to be used in solar cells are presented in this work. Cadmium Sulfide (CdS) as window material with 40 nm of thickness were deposited by chemical bath deposition (CBD) technique. A Molybdenum (Mo) layer was deposited as back contact on CIGS solar cells. Different CIGS thin films were processed by a simplified co-evaporation technique and revealed a good polycrystalline quality with an alfa-chalcopyrite phase. The stoichiometry of the CIGS thin films can be accurately controlled using a fully automated single vacuum photovoltaics manufacturing system. Automated system operations (ASO) is the set of software and hardware that allows computer systems, network devices or machines to function without any manual intervention. ASOs allow computer systems to work without a human operator physically located at the site where the system is installed. CIGS solar cells fabricated in this work, showed photovoltaic efficiencies close to 11 %.

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Section: Resultssupporting

confidence: 69%

SYSTEMATIZED AND SIMPLIFIED PROCESSING OF CuInGaSe2 THIN FILMS TO BE APPLIED ON SOLAR CELLS

Sastré-Hernández¹,

Mendoza-Pérez²,

Albor-Aguilera³

et al. 2020

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“…Finally, cationic ion‐exchange reactions, where metal salt cations in solution exchange with cations in an immersed thin film, have been investigated as a means to add elements into a layer in order to form a precursor that may be converted to CIGS. The formation of CuInS 2 has been demonstrated from chemically deposited ZnS 123 and CI(G)S devices with ∼4% efficiency have been demonstrated by adding Cu to evaporated indium (gallium) selenide layers 124, 125.…”

Section: Electrochemical Processes For Cigs Depositionmentioning

confidence: 99%

Non‐vacuum methods for formation of Cu(In, Ga)(Se, S)₂ thin film photovoltaic absorbers

Hibberd

Chassaing

Liu³

et al. 2010

Progress in Photovoltaics

320

196

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Polycrystalline thin films of copper indium diselenide and its alloys with gallium and sulphur (CIGS) have proven to be suitable for use as absorbers in high-efficiency solar cells. Record efficiency devices of 20% power conversion efficiency have been produced by co-evaporation of the elements under high vacuum. However, non-vacuum methods for absorber deposition promise significantly lower capital expenditure and reduced materials costs, and have been used to produce devices with efficiencies of up to 14%. Such efficiencies are already high enough for commercial up-scaling to be considered and several companies are now trying to develop products based on non-vacuum deposited CIGS absorbers. This article will review the wide range of non-vacuum techniques that have been used to deposit CIGS thin films, highlighting the state of the art and efforts towards commercialization.

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“…210-230 cm À 1 is attributed to the presence of an Se [21,22]. Raman peak at around 250-270 cm À 1 is due to the formation of Cu 2 À x Se compound, since the Cu-poor (e.g., CuSe) and Cu-rich (e.g., Cu 2 Se) compounds exhibit characteristic peaks at about 259 and 261 cm À 1 , respectively [23]. Compared to the CuInSe 2 film deposited at 1.60 mM [Se 4 + ], the sample deposited at 1.92 mM [Se 4 + ] shows a shoulder peak at ca.…”

Section: Methodsmentioning

confidence: 99%

Microstructure evolution of CuInSe2 thin films prepared by single-bath electrodeposition

Ren

Zhong

et al. 2011

Solar Energy Materials and Solar Cells

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Structural properties of Cu(In,Ga)Se2 thin films prepared from chemically processed precursor layers

Cited by 10 publications

References 19 publications

SYSTEMATIZED AND SIMPLIFIED PROCESSING OF CuInGaSe2 THIN FILMS TO BE APPLIED ON SOLAR CELLS

SYSTEMATIZED AND SIMPLIFIED PROCESSING OF CuInGaSe2 THIN FILMS TO BE APPLIED ON SOLAR CELLS

Non‐vacuum methods for formation of Cu(In, Ga)(Se, S)₂ thin film photovoltaic absorbers

Microstructure evolution of CuInSe2 thin films prepared by single-bath electrodeposition

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Structural properties of Cu(In,Ga)Se2 thin films prepared from chemically processed precursor layers

Cited by 10 publications

References 19 publications

SYSTEMATIZED AND SIMPLIFIED PROCESSING OF CuInGaSe2 THIN FILMS TO BE APPLIED ON SOLAR CELLS

SYSTEMATIZED AND SIMPLIFIED PROCESSING OF CuInGaSe2 THIN FILMS TO BE APPLIED ON SOLAR CELLS

Non‐vacuum methods for formation of Cu(In, Ga)(Se, S)2 thin film photovoltaic absorbers

Microstructure evolution of CuInSe2 thin films prepared by single-bath electrodeposition

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Non‐vacuum methods for formation of Cu(In, Ga)(Se, S)₂ thin film photovoltaic absorbers