Raman spectra of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">CuInSe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

Tanino, Hiroshi; Maeda, Takao; Fujikake, Hideo; Nakanishi, Hideo; Endo, Saburo; Irie, Taizo

doi:10.1103/physrevb.45.13323

Cited by 197 publications

(102 citation statements)

References 23 publications

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“…The spectral distance between the DAP and the DAP 1LO bands as well as between the DAP 1LO and DAP 2LO bands is about ~ 28 meV, which is close to the LO phonon energy in the chalcopyrite CuInSe 2 [15]. Therefore DAP 1LO and DAP 2LO can be assigned to phonon-assisted DAP recombination with a LO phonon energy of E LO = 28 meV.…”

Section:   With Constantmentioning

confidence: 90%

Optical properties of high quality Cu2ZnSnSe4 thin films

Luckert

Hamilton

Yakushev

et al. 2011

Applied Physics Letters

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Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra

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Section:   With Constantmentioning

confidence: 90%

Optical properties of high quality Cu2ZnSnSe4 thin films

Luckert

Hamilton

Yakushev

et al. 2011

Applied Physics Letters

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“…10 Note that the full width at half maximum ͑FWHM͒ of the A 1 mode is more than five times larger than that of a CuInSe 2 single crystal, thus indicating the poor crystalline quality of the layer. In addition, the presence of a lowfrequency shoulder in the 154 cm −1 region is related to the existence of complex point defects in the chalcopyrite structure ͑such as 2V Cu + V Se ͒, which give rise to the formation of ordered vacancies compounds ͑OVCs͒.…”

Section: ͑1͒mentioning

confidence: 99%

Raman microprobe characterization of electrodeposited S-rich CuIn(S,Se)2 for photovoltaic applications: Microstructural analysis

Izquierdo-Roca

Pérez-Rodrı́guez

Romano‐Rodríguez

et al. 2007

Journal of Applied Physics

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This article reports a detailed Raman scattering and microstructural characterization of S-rich CuIn͑S,Se͒ 2 absorbers produced by electrodeposition of nanocrystalline CuInSe 2 precursors and subsequent reactive annealing under sulfurizing conditions. Surface and in-depth resolved Raman microprobe measurements have been correlated with the analysis of the layers by optical and scanning electron microscopy, x-ray diffraction, and in-depth Auger electron spectroscopy. This has allowed corroboration of the high crystalline quality of the sulfurized layers. The sulfurizing conditions used also lead to the formation of a relatively thick MoS 2 intermediate layer between the absorber and the Mo back contact. The analysis of the absorbers has also allowed identification of the presence of In-rich secondary phases, which are likely related to the coexistence in the electrodeposited precursors of ordered vacancy compound domains with the main chalcopyrite phase, in spite of the Cu-rich conditions used in the growth. This points out the higher complexity of the electrodeposition and sulfurization processes in relation to those based in vacuum deposition techniques.

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“…[17][18][19] The lower energy region reveals broader bands N( $1.002 eV), P ($0.972 eV), and K ($0.972 eV) along with some phonon replicas with E LO % 29 meV. 22 The shape of the K band is modified by water absorption in the region of 0.9 eV. The possible origin of these emission bands has been proposed in Ref.…”

Section: Resultsmentioning

confidence: 96%

“…High concentrations of Cu In (3 Â 10 20 cm À3 ) and no V Cu were found in CuInSe 2 with [Cu]/[In] ¼ 1.05 using neutron scattering. 49 According to ab initio calculations 22 at small excesses of copper, we can expect the following order of the formation energies for defects in CuInSe 2 (without defects related to selenium, which were not considered in this study): Cu In < V Cu < V In < Cu i < In Cu . Excluding the vacancies, whose formation has been ruled out in Refs.…”

Section: E Possible Defects Associated With W-linesmentioning

confidence: 99%

“…Therefore, the probability of migration from the place of formation to a vacancy of indium V In should be rather high, whereas the formation energy of the Cu In defect is low and can be negative. 22 The chalcopyrite structure assumes an ordering of copper and indium on the cation sublattice, whereas violation of such an order can be considered as an element of sphalerite structure. Transformation of chalcopyrite to sphalerite structure has been observed after bombardment of CuInSe 2 single crystals with 1.5 keV Ar ions.…”

Section: E Possible Defects Associated With W-linesmentioning

confidence: 99%

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A photoluminescence study of excitonic grade CuInSe2 single crystals irradiated with 6 MeV electrons

Yakushev

Mudryi

Borodavchenko

et al. 2015

Journal of Applied Physics

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This version is available at https://strathprints.strath.ac.uk/54688/ Strathprints is designed to allow users to access the research output of the University of Strathclyde. Unless otherwise explicitly stated on the manuscript, Copyright © and Moral Rights for the papers on this site are retained by the individual authors and/or other copyright owners. Please check the manuscript for details of any other licences that may have been applied. You may not engage in further distribution of the material for any profitmaking activities or any commercial gain. You may freely distribute both the url (https://strathprints.strath.ac.uk/) and the content of this paper for research or private study, educational, or not-for-profit purposes without prior permission or charge.Any correspondence concerning this service should be sent to the High-quality single crystals of CuInSe 2 with near-stoichiometric elemental compositions were irradiated with 6 MeV electrons, at doses from 10 15 to 3 Â 10 18 cm À2 , and studied using photoluminescence (PL) at temperatures from 4.2 to 300 K. Before irradiation, the photoluminescence spectra reveal a number of sharp and well resolved lines associated with free-and bound-excitons. The spectra also show broader bands relating to free-to-bound transitions and their phonon replicas in the lower energy region below 1.0 eV. The irradiation with 6 MeV electrons reduces the intensity of the free-and the majority of the bound-exciton peaks. Such a reduction can be seen for doses above 10 16 cm À2 . The irradiation induces new PL lines at 1.0215 eV and 0.9909 eV and also enhances the intensity of the lines at 1.0325 and 1.0102 eV present in the photoluminescence spectra before the irradiation. Two broad bands at 0.902 and 0.972 eV, respectively, are tentatively associated with two acceptor-type defects: namely, interstitial selenium (Se i ) and copper on indium site (Cu In ). After irradiation, these become more intense suggesting an increase in the concentration of these defects due to irradiation. V C 2015 AIP Publishing LLC.[http://dx

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Raman spectra ofCuInSe2

Cited by 197 publications

References 23 publications

Optical properties of high quality Cu2ZnSnSe4 thin films

Optical properties of high quality Cu2ZnSnSe4 thin films

Raman microprobe characterization of electrodeposited S-rich CuIn(S,Se)2 for photovoltaic applications: Microstructural analysis

A photoluminescence study of excitonic grade CuInSe2 single crystals irradiated with 6 MeV electrons

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