2021
DOI: 10.1103/physrevapplied.16.014057
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Radio-Frequency Reflectometry in Silicon-Based Quantum Dots

Abstract: Radio-frequency (rf) reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of rf readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that on-chip modifications enable high-performance charg… Show more

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Cited by 17 publications
(7 citation statements)
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“…The impedance of the sensing dot is measured using RF reflectometry. The background of the measured signal depends on the inductance of the surface-mount inductor, the capacitance to ground 29 , 56 , 57 and the resistance to ground of the RF readout circuit. Extended Data Figure 6 f shows the response of the readout circuit under different microwave powers (the RF power is kept fixed).…”
Section: Methodsmentioning
confidence: 99%
“…The impedance of the sensing dot is measured using RF reflectometry. The background of the measured signal depends on the inductance of the surface-mount inductor, the capacitance to ground 29 , 56 , 57 and the resistance to ground of the RF readout circuit. Extended Data Figure 6 f shows the response of the readout circuit under different microwave powers (the RF power is kept fixed).…”
Section: Methodsmentioning
confidence: 99%
“…We demonstrate the TIA's performance by measuring 2-nA peak-to-peak square-wave signals, which mimic the output of a standard charge sensing for qubit readout. The signal-to-noise ratio (SNR) for RFB = 200 k is 12.7, with a time resolution of 48 ns, which is comparable to the state-of-the-art RF reflectometry technique readout [13][14][15]. Thus, our TIA has excellent potential for industrial and fundamental research applications requiring broadband and low-noise cryogenic amplification.…”
mentioning
confidence: 88%
“…It is worth comparing the performance of our TIA-based readout electronics with that reported for RF reflectometry techniques. Our setup's bandwidth is much broader than the state-of-the-art reflectometry readout technique, which ranges from a few hundred kilohertz to ten megahertz at an SNR ≥ 1 [13][14][15]. Concerning the current sensitivity, the fastest reported reflectometry setup (f−3dB = 10 MHz set by an auxiliary LPF) has an SNR of at 60 mK using the input power corresponding to excitation of approximately 2 nArms [13].…”
mentioning
confidence: 99%
“…This lack of tuning flexibility is often problematic. The problem is solved by an accumulation-mode layout: This is a device with multiple pattern gate-layers, for which positive and negative voltages for accumulation and depletion are chosen within layers [2,[37][38][39][40].…”
Section: Gate Layoutsmentioning
confidence: 99%