2003
DOI: 10.1016/j.nima.2003.08.094
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Radiation tolerance of epitaxial silicon carbide detectors for electrons and γ-rays

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Cited by 45 publications
(22 citation statements)
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“…[1]) and are listed in Table 1. A former batch of detectors was manufactured using gold contacts for the Schottky barrier [8], whilst a Ni 2 Si Schottky contact was coated on the most recent material [1]. In both cases an ohmic contact was obtained by the deposition of a multilayer of Ti/Pt/Au onto the backside of the substrate.…”
Section: Detectorsmentioning
confidence: 99%
See 1 more Smart Citation
“…[1]) and are listed in Table 1. A former batch of detectors was manufactured using gold contacts for the Schottky barrier [8], whilst a Ni 2 Si Schottky contact was coated on the most recent material [1]. In both cases an ohmic contact was obtained by the deposition of a multilayer of Ti/Pt/Au onto the backside of the substrate.…”
Section: Detectorsmentioning
confidence: 99%
“…The wide bandgap of 4H-SiC (3. elevated temperature and intense radiation environments [6]. Radiation hardness studies on SiC sensors have been performed recently by means of irradiations of neutrons [7], electrons [8], protons and gamma rays [9,6], pions [10] and light ions [11]. It has been suggested [10] that operation of SiC detectors at elevated temperatures will prolong SiC detector operating lifetime.…”
Section: Introductionmentioning
confidence: 99%
“…The radiation hardness of SiC detectors has been studied using irradiation with neutrons [6], protons and gamma photons [7,8], electrons [9], light ions [10] and pions [11]. In a recent study [12] the radiation hardness of SiC Schottky diodes was analyzed after irradiation with 24 GeV protons and 1 MeV neutrons.…”
Section: Introductionmentioning
confidence: 99%
“…Since SiC has been reported to be high radiation tolerance [1,2], it is expected that the radiation hardness of particle detectors, which is limited by the performance of Si detectors at present, can be much improved by using SiC detectors. In recent years, many researchers have studied the detector characteristics [3] of Schottky barrier [4][5][6] and p-n junction SiC diodes [7,8] in harsh environments, and promising results for SiC detectors with high radiation resistance were reported with improving crystal quality and device fabrication process. The interest of SiC in nuclear physics is the potential of high radiation hardness and the possibility of their operation at high temperature.…”
Section: Introductionmentioning
confidence: 99%