Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes

Sciortino, S.; Hartjes, F.; Lagomarsino, S.; Nava, F.; Brianzi, M.; Cindro, V.; Lanzieri, C.; Moll, M.; Vanni, P.

doi:10.1016/j.nima.2005.06.017

Cited by 55 publications

(33 citation statements)

References 17 publications

(22 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…12) in good agreement with results of Ref. [20,29]. At the same time, the reverse current increased by a factor of five and the noise by a factor of two (see Fig.…”

Section: Detector Responsesupporting

confidence: 89%

Light ions response of silicon carbide detectors

Napoli

Raciti

Rapisarda

et al. 2007

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

“…12) in good agreement with results of Ref. [20,29]. At the same time, the reverse current increased by a factor of five and the noise by a factor of two (see Fig.…”

Section: Detector Responsesupporting

confidence: 89%

Light ions response of silicon carbide detectors

Napoli

Raciti

Rapisarda

et al. 2007

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

“…The radiation resistance of 4H-SiC Schottky diode detectors to thermal neutrons has also been demonstrated (Seshadri et al 1999) with a significant reduction in charge collection efficiency observed only at neutron fluences >5x10 16 cm -2 (Figure 4). Similar radiation hardness measurements of 4H-SiC detectors to 1 MeV fast neutrons and protons have also been reported (Sciortino et al 2005). In this data the alpha particle CCE for a 21 µm thick 4H-SiC detector showed a significant decrease at neutron fluences above 1 x 10 14 cm 2 (Figure 6), reducing to a CCE of ~ 10% at a neutron fluence of 1 x 10 17 cm 2 .…”

Section: Radiation Damagesupporting

confidence: 87%

New materials for radiation hard semiconductor dectectors

Sellin

Vaitkus

2006

Nuclear Instruments and Methods in Physics Research Section A:

175

View full text Add to dashboard Cite

We present a review of the current status of research into new semiconductor materials for use as particle tracking detectors in very high radiation environments. This work is carried out within the framework of the CERN RD50 collaboration, which is investigating detector technologies suitable for operation at the proposed Super-LHC facility (SLHC). Tracking detectors operating at the SLHC in this environment will have to be capable of withstanding radiation levels arising from a luminosity of 10 35 cm -2 s -1 which will present severe challenges to current tracking detector technologies. The "new materials" activity within RD50 is investigating the performance of various semiconductor materials that potentially offer radiation hard alternatives to silicon devices. The main contenders in this study are silicon carbide, gallium nitride and amorphous silicon. In this paper we review the current status of these materials, in terms of material quality, commercial availability, charge transport properties, and radiation hardness studies. Whilst these materials currently show considerable promise for use as radiation hard tracking detectors, their ultimate success will depend on the continued improvement of the availability of high quality material.

show abstract

“…Any mechanism that modifies the properties of the interface such as the introduction of an interfacial layer [1][2][3][4], annealing [5,6], irradiation with gamma rays [7,8], protons [9][10][11][12][13][14] and neutrons [14][15][16], ion implantation, [17][18][19] and high-energy ion beam irradiation [20][21][22][23][24][25][26] are found to alter the characteristics of the barrier. The Schottky barrier height (SBH) forms a very important parameter of the diode as it controls the electrical transport across the barrier.…”

Section: Introductionmentioning

confidence: 99%