We have measured the radiation tolerance of poly-crystalline and single-crystalline diamonds grown by the chemical vapor deposition (CVD) process by measuring the charge collected before and after irradiation in a 50 m pitch strip detector fabricated on each diamond sample. We irradiated one group of sensors with 800 MeV protons, and a second group of sensors with 24 GeV protons, in steps, to protons cm−2 and protons cm−2 respectively. We observe the sum of mean drift paths for electrons and holes for both poly-crystalline CVD diamond and single-crystalline CVD diamond decreases with irradiation fluence from its initial value according to a simple damage curve characterized by a damage constant for each irradiation energy and the irradiation fluence. We find for each irradiation energy the damage constant, for poly-crystalline CVD diamond to be the same within statistical errors as the damage constant for single-crystalline CVD diamond. We find the damage constant for diamond irradiated with 24 GeV protons to be and the damage constant for diamond irradiated with 800 MeV protons to be . Moreover, we observe the pulse height decreases with fluence for poly-crystalline CVD material and within statistical errors does not change with fluence for single-crystalline CVD material for both 24 GeV proton irradiation and 800 MeV proton irradiation. Finally, we have measured the uniformity of each sample as a function of fluence and observed that for poly-crystalline CVD diamond the samples become more uniform with fluence while for single-crystalline CVD diamond the uniformity does not change with fluence.

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Implementation of 3D-architectures in diamond detectors promises to achieve unreached performances in the radiation-harsh environment of future high-energy physics experiments. This work reports on the collection efficiency under β-irradiation of graphitic 3D-electrodes, created by laser pulses in the domains of nanoseconds (ns-made-sensors) and femtoseconds (fs-made-sensors). Full collection is achieved with the fs-made-sensors, while a loss of 25%–30% is found for the ns-made-sensors. The peculiar behaviour of ns-made sensors has been explained by the presence of a nano-structured sp3-carbon layer around the graphitic electrodes, evidenced by micro-Raman imaging, by means of a numerical model of the charge transport near the electrodes.

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