Radiation effect on pn-SiC diode as a detector

Kinoshita, Akimasa; Iwami, Motohiro; Kobayashi, Kenichi; Nakano, I.; Tanaka, R.; Kamiya, Tomihiro; Ohi, Akihiko; Ohshima, Takeshi; Fukushima, Y.

doi:10.1016/j.nima.2005.01.059

Cited by 29 publications

(17 citation statements)

References 12 publications

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“…where E m ¼ ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi 2qV D N a =e 0 e s p is the maximum electric field detailed in literature [37]. These calculated electrical characteristics are also given in Table 1.…”

Section: Resultsmentioning

confidence: 99%

Influences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitors

Kaya

Yılmaz

2014

J Radioanal Nucl Chem

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Effects of gamma-ray irradiation on the electrical characteristics of Al 2 O 3 MOS capacitors such as barrier height, acceptor concentration, series resistance and interface state parameters have been studied by analyzing capacitance-voltage (C-V) and conductance-voltage (G/ x-V) measurements. The fabricated MOS capacitors were irradiated with gamma-rays at doses up to five grays. C-V and G/x-V measurements were recorded prior to and after irradiation at high frequency. The results show that the measured capacitance and conductance values decreased with increasing in irradiation dose and C-V and G/x curves has been shifted toward the negative voltages. Moreover, the series resistance (R s ) and density of interface states increased with increasing in irradiation dose and density of interface states (D it ) were calculated as order of 10 12 eV -1 cm -2 prior to and after irradiation. Due to presence and variations in the R s values, the corrected and the measured C-V and G/x-V exhibited different behaviors. Therefore other electrical characteristics were assessed from corrected C c characteristics. It was observed that acceptor concentration decreased with increasing in barrier height of device due to changes in interface states and diffusion potential.

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Section: Resultsmentioning

confidence: 99%

Influences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitors

Kaya

Yılmaz

2014

J Radioanal Nucl Chem

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“…Kinoshita et al [5] observed that the charge collection efficiency of a 6H-SiC detector for the ionization produced by alpha particles remained unchanged (100%) following 60 Co gamma-ray exposures up to 2.5 MGy. Their detectors were based on p-n junctions with thin ($5 · 10 À3 mm) active volume thicknesses.…”

Section: Discussionmentioning

confidence: 99%

The effects of intense gamma-irradiation on the alpha-particle response of silicon carbide semiconductor radiation detectors

Ruddy

Seidel

2007

Nuclear Instruments and Methods in Physics Research Section B:

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“…The doping dependent mobility, , for SiC materials (based on the Caughey-Thomas model) has been TABLE I THE TCAD PARAMETERS USED IN THIS STUDY optimized in a previous study and is described by the following equation [31]: (4) where…”

Section: B Models Used In Device Simulationmentioning

confidence: 99%

Impact of Auger Recombination on Charge Collection of a 6H-SiC Diode by Heavy Ions

Onoda

Ohshima

Hirao

et al. 2007

IEEE Trans. Nucl. Sci.

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Charge collection efficiency (CCE) generated in a 6H-SiC p + n diode by impact of heavy ions was evaluated by the transient ion beam induced current (TIBIC) technique. Numerical analysis by using technology computer aided design (TCAD) concludes that the Auger recombination process reduces CCE. Comparing experimentally measured CCEs with calculated ones revealed that the ambipolar Auger coefficient of about 3 10 29 cm 6 .

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Radiation effect on pn-SiC diode as a detector

Cited by 29 publications

References 12 publications

Influences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitors

Influences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitors

The effects of intense gamma-irradiation on the alpha-particle response of silicon carbide semiconductor radiation detectors

Impact of Auger Recombination on Charge Collection of a 6H-SiC Diode by Heavy Ions

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