Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process

García, Marcos Fernández; Gallrapp, C.; Moll, M.; Muenstermann, D.

doi:10.1088/1748-0221/11/02/p02016

Cited by 22 publications

(23 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The diode breakdown voltage is below −100 V for all irradiated samples 6 and is significantly lower than the non-irradiated sensors, which have a typical breakdown voltage of about −90 V. This is consistent with an increased depletion thickness after irradiation [16]. test diodes scaled 14 10 × 5 15 10 × 1 15 10 × 5 Figure 6: Leakage currents of the complete 32x40 pixel matrix for neutron irradiated sensors in full operation for a sensor temperature T MuPix ≈ 40 • C. Each pixel encloses 9 diodes.…”

Section: Leakage Currentssupporting

confidence: 71%

See 1 more Smart Citation

Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm

Augustin

Berger

Dittmeier

et al. 2018

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on a 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process, features a fully integrated on-chip readout, i.e. hit-digitization, zero suppression and data serialization. MuPix7 is the first fully monolithic HV-CMOS pixel sensor that has been tested for the use in high irradiation environments like HL-LHC. We present results from laboratory and test beam measurements of MuPix7 prototypes irradiated with neutrons (up to 5.0 × 10 15 n eq /cm 2 ) and 24 GeV protons (up to 7.8 × 10 15 protons/cm 2 ) and compare the performance with non-irradiated sensors. At sensor temperatures of about 8 • C efficiencies of ≥90 % at noise rates below 40 Hz per pixel are measured for fluences of up to 1.5 × 10 15 n eq /cm 2 . A time resolution better than 22 ns, expressed as Gaussian σ, is measured for all tested settings and sensors, even at the highest irradiation fluences. The data transmission at 1.25 Gbit/s and the on-chip PLL remain fully functional. 2 I.e. signal amplification, digitization, zero supression, time stamp sampling, readout state-machine and data serialization is implemented on chip.

show abstract

Section: Leakage Currentssupporting

confidence: 71%

“…It is also a bit surprising that the 7.8 × 10 15 protons/cm 2 sample shows less leakage currents than the 1.5 × 10 15 protons/cm 2 sample. From edge-TCT measurements [16] it is known that the depletion thickness has a maximum for a fluence of about 1.5 × 10 15 protons/cm 2 which possibly could explain the higher leakage currents.…”

Section: Leakage Currentsmentioning

confidence: 99%

Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm

Augustin

Berger

Dittmeier

et al. 2018

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

show abstract

“…CMOS pixels with depleted sensing volume, also labelled as depleted monolithic active pixel sensors (DMAPS), can be achieved by exploiting the high-resistivity and/or high-voltage add-ons of modern CMOS technologies. Many such devices have been reported, showing high radiation tolerance towards the requirements of experiments in the High-Luminosity LHC (HL-LHC) era [5][6][7][8]. Moreover, multiple nested wells, available in many commercial CMOS processes, allow to implement full CMOS electronics inside the pixel (see Section 2), and therefore fast readout architectures like hybrid pixels are possible, beyond the rolling shutter readout traditionally used in MAPS.…”

Section: Introductionmentioning

confidence: 99%

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

Wang¹,

Barbero²,

Berdalovic³

et al. 2018

J. Inst.

View full text Add to dashboard Cite

A: Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-MonoPix and TJ-MonoPix, are presented. LF-MonoPix was designed and fabricated in the LFoundry 150 nm CMOS technology, and TJ-MonoPix has been designed in the TowerJazz 180 nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The design of the two prototypes will be described. First measurement results for LF-MonoPix will also be shown. K: Depleted monolithic CMOS pixels, particle tracking detectors (solid-state detectors), Front-end electronics for detector readout, VLSI circuit 1Corresponding author.

show abstract

“…The opportunity of using a commercial technology and avoiding bump-bonding makes HV-CMOS devices a cost effective alternative to the standard hybrid detectors. During the last years HV-CMOS devices from different foundries, with different technologies and on different substrate resistivities have been investigated [2][3][4][5]. The results show an initial increase of the depletion depth after irradiation described by an effective reduction of the acceptor concentration in the substrate.…”

Section: Introductionmentioning

confidence: 99%

Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade

et al. 2017

View full text Add to dashboard Cite

Silicon detectors based on the HV-CMOS technology are being investigated as possible candidate for the outer layers of the ATLAS pixel detector for the High Luminosity LHC. In this framework the H35Demo ASIC has been produced in the 350 nm AMS technology (H35). The H35Demo chip has a large area (18.49 × 24.40 mm 2 ) and includes four different pixel matrices and three test structures. In this paper the radiation hardness properties, in particular the evolution of the depletion region with fluence is studied using edge-TCT on test structures. Measurements on the test structures from chips with different substrate resistivity are shown for non irradiated and irradiated devices up to a cumulative fluence of 2 · 10 15 1 MeV n eq /cm 2 .

show abstract

Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process

Cited by 22 publications

References 6 publications

Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm

Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade

Contact Info

Product

Resources

About