Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade

Cavallaro, E.; Casanova, R.; Förster, F. A.; Grinstein, S.; Lange, J.; Kramberger, G.; Mandić, I.; Puigdengoles, C.; Terzo, S.

doi:10.1088/1748-0221/12/01/c01074

Cited by 29 publications

(31 citation statements)

References 8 publications

(9 reference statements)

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“…The value is close to c = 1.98·10 -13 cm 2 reported in [27] from measurements with neutron irradiated detectors made on p-type FZ silicon wafers of similar initial resistivity and as such in agreement with observations from [16,29] that the acceptor removal constant is smaller for material with higher initial acceptor concentration. Recently reported results of similar measurements on CMOS samples with initial resistivities of few hundred Ωcm also fit into this picture [30,31]. They show the growth of depleted depth with irradiation up to fluences larger than in LF (2 kΩcm) but smaller than in CHESS-1 or HV2FEI4 (10 and 20 Ωcm) which would translate in the acceptor removal constant value between those of LF and of CHESS-1 and HV2FEI4.…”

Section: Fluence Dependence Of Neffsupporting

confidence: 57%

Neutron irradiation test of depleted CMOS pixel detector prototypes

et al. 2017

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Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 kΩcm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation. The test structures were produced for investigation of CMOS technology in tracking detectors for experiments at HL-LHC upgrade. Measurements were made with passive detector structures in which current pulses induced on charge collecting electrodes could be directly observed. Thickness of depleted layer was estimated and studied as function of neutron irradiation fluence. An increase of depletion thickness was observed after first two irradiation steps to 1·10 13 n/cm 2 and 5·10 13 n/cm 2 and attributed to initial acceptor removal. At higher fluences the depletion thickness at given voltage decreases with increasing fluence because of radiation induced defects contributing to the effective space charge concentration. The behaviour is consistent with that of high resistivity silicon used for standard particle detectors. The measured thickness of the depleted layer after irradiation with 1·10 15 n/cm 2 is more than 50 µm at 100 V bias. This is sufficient to guarantee satisfactory signal/noise performance on outer layers of pixel trackers in HL-LHC experiments.

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Section: Fluence Dependence Of Neffsupporting

confidence: 57%

Neutron irradiation test of depleted CMOS pixel detector prototypes

et al. 2017

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“…The resistivity values obtained from the fit are consistent with the tolerance declared by ams for the 20, 80 and 200 Ω · cm samples, despite the fact that the formula used for the fit is an approximation and assumes the sensors to be back-biased. The estimated resistivity of the 1000 Ω · cm sample is not compatible with the declared resistivity values, but this behaviour has already been observed in other measurements [8].…”

Section: Characterisation Of the Non Irradiated Samplesmentioning

confidence: 49%

Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

et al. 2018

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A : This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.

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“…The study has been done using both unirradiated and irradiated sensors. A full characterisation of a H35 Demonstrator irradiated with protons at TRIGA reactor has also been performed [16]. Figure 8 shows the depth of the depleted volume as a function of the bias voltage for different stages of neutron irradiation.…”

Section: Edge Tct Resultsmentioning

confidence: 99%

CMOS pixel sensor development for the ATLAS experiment at the High Luminosity-LHC

Rimoldi

2017

J. Inst.

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A: The current ATLAS Inner Detector will be replaced with a fully silicon based detector called Inner Tracker (ITk) before the start of the High Luminosity-LHC project (HL-LHC) in 2026. To cope with the harsh environment expected at the HL-LHC, new approaches are being developed for pixel detectors based on CMOS technology. Such detectors can provide charge collection, analog and digital amplification in the same silicon wafer. The radiation hardness is obtained with multiple nested wells that give the embedded CMOS electronics sufficient shielding. The goal of this programme is to demonstrate that depleted CMOS pixels are suitable for high rate, fast timing and high radiation operation at the LHC. A number of alternative solutions have been explored and characterised. In this document, the results for chips produced by AMS are reported.

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Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade

Cited by 29 publications

References 8 publications

Neutron irradiation test of depleted CMOS pixel detector prototypes

Neutron irradiation test of depleted CMOS pixel detector prototypes

Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

CMOS pixel sensor development for the ATLAS experiment at the High Luminosity-LHC

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