2018
DOI: 10.1088/1748-0221/13/10/p10004
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Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation

Abstract: A : This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.

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Cited by 8 publications
(8 citation statements)
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References 11 publications
(15 reference statements)
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“…A larger efficiency is instead measured in the chip irradiated with protons to 1 × 10 15 n eq /cm 2 with respect to the one irradiated with neutrons to the same fluence despite the higher threshold of the first one. This can be explained by the larger depletion depth which is obtained with proton irradiation with respect to neutron irradiation as observed in TCT measurements due to acceptor removal effect [22]. For almost all irradiated samples up to 1 × 10 15 n eq /cm 2 the same efficiency as measured before irradiation is recovered with a bias voltage of 150 V. The only exception is the H7 sensor irradiated with protons for which the measurements were limited to 120 V by the lower breakdown voltage.…”
Section: Efficiency After Irradiationmentioning
confidence: 87%
“…A larger efficiency is instead measured in the chip irradiated with protons to 1 × 10 15 n eq /cm 2 with respect to the one irradiated with neutrons to the same fluence despite the higher threshold of the first one. This can be explained by the larger depletion depth which is obtained with proton irradiation with respect to neutron irradiation as observed in TCT measurements due to acceptor removal effect [22]. For almost all irradiated samples up to 1 × 10 15 n eq /cm 2 the same efficiency as measured before irradiation is recovered with a bias voltage of 150 V. The only exception is the H7 sensor irradiated with protons for which the measurements were limited to 120 V by the lower breakdown voltage.…”
Section: Efficiency After Irradiationmentioning
confidence: 87%
“…The Bern Medical Cyclotron is involved in the qualification of new sensor technologies, as well as other materials, in view of the detector upgrades for the High-Luminosity LHC. As an example, the radiation hardness of high-voltage CMOS pixel sensors has been tested to a fluence of 1.9 × 10 15 n eq /cm 2 [31,32]. Currently, an extensive irradiation campaign is ongoing, aiming to validate the radiation tolerance of the data transmission chain [33] for the read-out of the Inner Tracker (ITk) pixel detector of the ATLAS experiment [34].…”
Section: Examples Of Irradiation Campaignsmentioning
confidence: 99%
“…The Bern Medical Cyclotron is involved in the qualification of new sensor technologies, as well as other materials, in view of the detector upgrades for the High-Luminosity LHC. As an example, the radiation hardness of high-voltage CMOS pixel sensors has been tested to a fluence of 1.9 × 10 15 1 MeVn eq /cm 2 [30] [31]. Currently, an extensive irradiation campaign is ongoing, aiming to validate the radiation tolerance of the data transmission chain [32] for the read-out of the Inner Tracker (ITk) pixel detector of the ATLAS experiment [33].…”
Section: Examples Of Irradiation Campaignsmentioning
confidence: 99%