Radiation Effects on Oxynitride Gate Dtelectrics

Pancholy, R. K.; Erdmann, F. M.

doi:10.1109/tns.1983.4333097

Cited by 32 publications

(3 citation statements)

References 13 publications

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“…Recently, the radiation hardness of reoxidized nitrided oxides has been shown to be superior to that of thin oxides [5][6][7]. In this report we present the results of total-dose testing of thin nitrided oxides that have been nitridized at temperatures of 950, 1050, 1100, and 1150"C for nitridation times of 45 to 300 sec.…”

Section: Introductionmentioning

confidence: 94%

Total dose-induced charge buildup in nitrided-oxide MOS devices

Krantz

Scarpulla

Cable³

1991

IEEE Trans. Nucl. Sci.

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Section: Introductionmentioning

confidence: 94%

Total dose-induced charge buildup in nitrided-oxide MOS devices

Krantz

Scarpulla

Cable³

1991

IEEE Trans. Nucl. Sci.

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“…Other publications did not bother with the quantification of the AES depth profiles or line scans at all, but simply used the intensity profiles [6,[127][128][129][130][131] in order to check the homogeneity of the films or the effect of electron beams on the surface. An SEM image of the impact area of the electron beam is given in [127].…”

Section: S Dreer and P Wilhartitzmentioning

confidence: 99%

“…An SEM image of the impact area of the electron beam is given in [127]. Such qualitative depth profiles of Rugate filters with 10 sinusoidal periods and a linearly graded SiO X N Y film are also given in [132].…”

Section: S Dreer and P Wilhartitzmentioning

confidence: 99%

Critical evaluation of the state of the art of the analysis of light elements in thin films demonstrated using the examples of SiOXNY and AlOXNY films (IUPAC Technical Report)

Dreer¹,

Wilhartitz²

2004

Pure and Applied Chemistry

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The quantitative analysis of thin films containing light elements is very important in improving the coating processes and technological properties of the products. In order to review the state of the art of modern analytical techniques for such applications, the model systems SiOXNY and AlOXNY were selected. Over 1000 abstracts were screened, and the relevant literature was evaluated to give a comprehensive overview of instruments, analytical procedures and results, film types, deposition methods, and investigation goals. From more than 150 citations, the limitations, drawbacks, and pitfalls of the different methods were extracted and reviewed critically, while in addition, improvements were proposed where possible. These suggestions are combined with the newest results of investigation by the authors of this paper. Recommendations concerning the optimized combination of analytical methods for different analytical problems have been worked out on the basis of all results. Analysis of various multicomponent systems containing light elements demonstrated the applicability of the different methods of analysis in combination to all film systems with related compositions.

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Charge Transport through Layers of Thermally Nitrided SiO2

Ефимов

Esaev

Meerson

et al. 1986

phys. stat. sol. (a)

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Transport of electrons and holes is studied in 10 nm thermal SiO2 layers annealed in ammonia within the temperature range from 900 to 1100°C using the charge accumulation (CA) method. For this an oxide, after being nitrided, is covered with a 150 nm silicon nitride layer. The dependence of current density on electric field is determined from the curves of accumulation of positive (with “—” on metal) and negative (with “+” on metal) charges on the Si3N4 traps. It is shown that with an increase in the annealing temperature of SiO2 the current of accumulation of a positive charge grows reaching 10 orders as compared to that of the initial samples. An electron component of the current through the nitroxide varies much weaker. Both the components are little dependent on temperature, which is indicative of a tunnel mechanism of charge transport through the nitroxide. Measurements of the Si‐nitroxide barrier by the technique of internal photoemission show that a decrease of the barrier for electrons during the SiO2 annealing amounts to not more than 0.1 V. These data demonstrate that the modification of the valence band of dielectric occurs mostly during the SiO2 nitridation.

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Radiation Effects on Oxynitride Gate Dtelectrics

Cited by 32 publications

References 13 publications

Total dose-induced charge buildup in nitrided-oxide MOS devices

Total dose-induced charge buildup in nitrided-oxide MOS devices

Critical evaluation of the state of the art of the analysis of light elements in thin films demonstrated using the examples of SiOXNY and AlOXNY films (IUPAC Technical Report)

Charge Transport through Layers of Thermally Nitrided SiO2

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