An experimental study of the effects of various parameters on the properties of (111) and (100)Si films grown on sapphire
false(α‐Al2O3false)
by the
SiH4
pyrolysis CVD method has been carried out. The following were examined: autodoping, growth temperature and growth rate, As‐doped n‐type films, p‐type films doped with B, properties as a function of film thickness, and the effect of reactor configuration. It was determined that at growth rates of ∼2–6 μm/min in a vertical reactor n‐type (111) Si films grown at temperatures of 1050°–1100°C on
Al2O3
substrates oriented near the (112̅0) plane are electrically superior to those grown on
false(011̅2false)Al2O3
and
false(101̅4false)Al2O3
over the temperature range 950°–1100°C. Films with electron mobilities as high as 600–700 cm2/V‐sec for carrier concentrations of 1016–1017 cm−3 were obtained. P‐type Si films grown using
B2H6
as the dopant source were also electrically better on
∼false(11̅20false)Al2O3
[(111)Si‐growth] than on
false(011̅2false)Al2O3
[(100)Si growth], Hall mobilities being ∼2–3 times larger for hole concentrations 1016– 1017 cm−3. A comparison of film properties of n‐type films as a function of thickness indicated both the (100) and (111)Si films behave essentially the same way, i.e., the average mobilities show a steady decrease with decreasing film thickness. These studies revealed the strong interrelationships that exist among the various parameters involved in optimizing Si growth on insulators and indicated that growth conditions (i) must be optimized for the particular substrate orientation chosen; (ii) differ for those substrate orientations which lead to the same Si orientation; (iii) are dependent on reactor geometry; and (iv) should be optimized for the particular film thickness desired.
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