The Use of Metalorganics in the Preparation of Semiconductor Materials

Manasevit, H. M.; Erdmann, F. M.; Simpson, W. I.

doi:10.1149/1.2407853

Cited by 296 publications

(75 citation statements)

References 13 publications

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“…[16][17][18] This route is proving difficult, as the difference in lattice parameters and the strength of the Si-N bond prevent the formation of smooth, single-crystal GaN on Si ͑111͒. 18,19 To some extent this has been alleviated by using a two-step method involving various buffer layers such as SiC, 20,21 AlN, 22,23 GaAs, 24 AlAs, 25 and SiN x . 26 These typically yield smooth morphologies and columnar microstructures with a TD density of 10 10 -10 11 cm −2 -no real advance.…”

Section: Introductionmentioning

confidence: 99%

Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon

O'Reilly

Lucas

McNally

et al. 2005

Journal of Applied Physics

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We have probed the luminescence properties of a wide-band-gap, direct band-gap optoelectronic material, grown on closely lattice-matched silicon substrates, namely, ␥-CuCl on Si. This material system is compatible with current Si or GaAs-based electronic/optoelectronic technologies. Polycrystalline epitaxy of CuCl can be controlled such that it maintains an orientation similar to the underlying Si substrate. Importantly, chemical interactions between CuCl and Si are eliminated. Photoluminescence and cathodoluminescence results for CuCl, deposited on either Si ͑100͒ or Si ͑111͒, reveal a strong room-temperature Z 3 excitonic emission at ϳ387 nm. We have developed and demonstrated the room-temperature operation of an ultraviolet electroluminescent device fabricated by the growth of ␥-CuCl on Si. The application of an electrical potential difference across the device results in an electric field, which promotes light emission through hot-electron impact excitation of electron-hole pairs in the ␥-CuCl. Since the excitonic binding energy in this direct band-gap material is of the order of 190 meV at room temperature, the electron-hole recombination and subsequent light emission at ϳ380 and ϳ387 nm are mediated by excitonic effects.

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Section: Introductionmentioning

confidence: 99%

Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon

O'Reilly

Lucas

McNally

et al. 2005

Journal of Applied Physics

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“…Nitride semiconductors have been deposited by hydride vapor phase epitaxy (HVPE) 4,5 , and organometallic vapor phase epitaxy (OMVPE) 6,7 , and by molecular beam epitaxy (MBE). 8 These wide bandgap semiconductor structures have been grown on many substrates, such as sapphire, SiC, ZnO, MgAl 2 O 4 , Si, GaAs, MgO, NaCl, W, Hf and TiO 2 due to the lack of large area native substrates.…”

Section: Introductionmentioning

confidence: 99%

Characterization of free-standing hydride vapor phase epitaxy GaN

Jasiński

Swider

Liliental‐Weber

et al. 2001

Applied Physics Letters

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A free-standing GaN template grown to a thickness of 300 µm by hydride vapor phase epitaxy (HVPE) has been characterized for its structural properties by transmission electron microscopy (TEM). The TEM investigation was augmented by X-ray diffraction, defect delineation etching process followed by imaging with atomic force microscopy (AFM), and variable temperature photoluminescence (PL). Convergent Beam Electron Diffraction (CBED) was employed to determine the polarity of the free surface and the side juxtaposed to substrate before separation. The substrates side was confirmed to the N-face indicating a growth in the [0001] direction from Ga to N. The density of dislocations near the N-face was determined to be, in order, 3 ± 1 x 10 7 , 4 ± 1 x 10 7 , and about 1 x 10 7 cm -2 as determined by cross-sectional TEM, plan-view TEM and a defect revealing etch, respectively. Identical observations on the Ga-face revealed the defect concentration to be, in order, less than 1 x 10 7 cm -2 by plan-view TEM, 5 x 10 5 cm -2 by cross-sectional TEM, and 5 x 10 5 cm -2 by defect revealing hot H 3 PO 4 acid, respectively. The full width at half maximum (FWHM) of the symmetric (0002) X-ray diffraction peak was 69 and 160 arcsec for the Ga and N-faces, respectively. That for the asymmetric (1014) peak was 103 and 140 arcsec for Ga-and N-faces, respectively. The donor bound exciton linewidth as measured on the Ga and N-face (after the removal of the damage) is about 1 meV each at 10K. Instead of the commonly observed yellow band, this sample displayed a green band, which is centered at about 2.44 eV.

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“…Control of electric conductivity of n-type GaN grown without the LT buffer layer had been quite difficult, because of the high residual donor concentration of greater than 10 19 cm À3 .Onthe other hand, when aL T-AlN buffer layer was used, the conductivity of n-type GaN became extremely low because of the drastic reduction in the residual donor concentration. Control of n-type conductivity is extremely important for many types of nitride-based devices.In1990, we succeeded in controlling the conductivity of n-type GaN [3] (and AlGaN in 1991), [39] over arange of about two orders of magnitude,b yS id oping using SiH 4 ,a ss hown in Figure 15.…”

Section: Conductivity Control Of N-type Gan and Nitride Alloysmentioning

confidence: 99%