2011 12th European Conference on Radiation and Its Effects on Components and Systems 2011
DOI: 10.1109/radecs.2011.6131335
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Radiation characterization of the austriamicrosystems 0.35 µm CMOS technology

Abstract: The design of mixed-signal ASICs for space requires a detailed knowledge of the behaviour of the technology to be used in an environment imposing radiation levels and temperatures beyond those found in standard applications. Commercial foundries providing standard CMOS technologies do not usually have or make available data on the behaviour of their devices under those conditions. Instituto de Microelectrónica de Sevilla and Universidad de Sevilla (IMSE-USE) have started a long term collaboration with the Span… Show more

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Cited by 14 publications
(12 citation statements)
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“…Temperature tests from -25ºC to +125ºC have shown no significant effect with respect to the results reported in Table I. According to previous characterization of individual electronic components in the CMOS process [8], the performance for temperatures down to -90ºC is expected to be correct as well.…”
Section: Resultsmentioning
confidence: 72%
See 1 more Smart Citation
“…Temperature tests from -25ºC to +125ºC have shown no significant effect with respect to the results reported in Table I. According to previous characterization of individual electronic components in the CMOS process [8], the performance for temperatures down to -90ºC is expected to be correct as well.…”
Section: Resultsmentioning
confidence: 72%
“…Several test chips, with their corresponding experimental setups, irradiation campaigns, and low temperature measutherements, were employed for the characterization of total ionizing dose (TID) effects, singleevent effects (SEE), and low temperature behavior. A basic RHBD digital library was designed as part of this process [8].…”
Section: Rhbd Techniquesmentioning
confidence: 99%
“…The total deviation is less than 0.8% and correlates with the variation of the bandgap. According to previous characterization of individual electronic components in the CMOS process [13], the performance for temperatures down to −90°C is expected to be correct as well.…”
Section: Resultsmentioning
confidence: 88%
“…The design of this ASIC for space applications builds on previous work oriented to the characterization of radiation and low temperature effects on the selected standard CMOS process [13]. Specific RHBD techniques have been employed in this ASIC.…”
Section: Rhbd Techniquesmentioning
confidence: 99%
“…Previous work to the design of this rad-hard ASIC was needed in order to characterize the selected standard 0.35 µm CMOS process against radiation and the extended temperature range, including several irradiation campaigns with their corresponding test chips and experimental setups [24]. As part of this process, a basic radiation-hardened digital library was also designed.…”
Section: Rhbd Techniquesmentioning
confidence: 99%