Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction

Marca, V. Della; Postel-Pellerin, J.; Kempf, Thibault; Régnier, A.; Chiquet, P.; Bocquet, Marc

doi:10.1016/j.microrel.2018.06.116

Cited by 3 publications

(1 citation statement)

References 20 publications

(30 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3. and explained in a previous work [15]. The Remote-sense and Switch Unit (RSU) modules enable the link with the probes and the device under test [16].…”

Section: Methodsmentioning

confidence: 99%

Real-Time Switching Dynamics in STT-MRAM

Yazigy

Postel-Pellerin

Marca

et al. 2022

IEEE J. Electron Devices Soc.

Self Cite

View full text Add to dashboard Cite

In this paper a new experimental technique for measuring the switching dynamics and extracting the energy consumption of Spin Transfer Torque MRAM (STT-MRAM) device is presented. This technique is performed by a real-time current reading while a pulsed bias is applied. The switching from a high resistive state, anti-parallel (AP) alignment, to a low resistive state, parallel (P) alignment, is investigated as well as the impact of the cell diameter on the switching parameters. We demonstrate that preswitching and switching times and energies have a log-linear relationship with the applied voltage. Increasing the applied voltage leads to a higher spin torque on the free layer in a shorter time. This decreases the time needed to change the magnetization orientation of this layer, thus the time required before the switching occurs. We have also shown that for a given applied voltage, the smaller the cell the longer the time before switching. For low applied voltages, the preswitching time increases exponentially dominating the whole reversal time. The longer switching times can be explained by a lower Joule heating not sufficient to induce the thermally activated reversal process. This phenomenon is accentuated for smaller cells, where the heating is more significant and the time before switching is shorter than for larger cells.

show abstract

“…3. and explained in a previous work [15]. The Remote-sense and Switch Unit (RSU) modules enable the link with the probes and the device under test [16].…”

Section: Methodsmentioning

confidence: 99%

Real-Time Switching Dynamics in STT-MRAM

Yazigy

Postel-Pellerin

Marca

et al. 2022

IEEE J. Electron Devices Soc.

Self Cite

View full text Add to dashboard Cite

show abstract

1T-NOR Flash memory after endurance degradation: An advanced TCAD simulation

Matteo

Simola

Postel-Pellerin

et al. 2022

Microelectronics Reliability

Self Cite

View full text Add to dashboard Cite

STATE: A Test Structure for Rapid Prediction of Resistive RAM Electrical Parameter Variability

Aziza

Postel-Pellerin

Bazzi

et al. 2022

2022 IEEE International Symposium on Circuits and Systems (ISCAS)

View full text Add to dashboard Cite

Resistive RAM (RRAM) design optimization and reliability monitoring is essential not only to gain market share in the highly competitive emerging memory sector, but also to enable future high-capacity and power-efficient braininspired systems, beyond the capabilities of today's hardware. Common problems with RRAM are related to high variability in operating conditions and low yield. Although research has taken steps to resolve these issues, variability remains a major hurdle for the wide spread of the technology. In this paper, a novel test structure consisting of an array of non-addressable 1T-1R RRAM memory cells with parallel connection of all memory elements is introduced. The test structure can be used as a powerful tool for process variation monitoring during a new process technology introduction and also for marginal cell populations detection during process maturity. The test structure is designed to measure RRAM parameters of interest based on a simple measurement methodology: from the transfer characteristic measured under the select transistor clamping bias, it is possible to obtain accurate information on the RRAM switching parameters as well as the ON/OFF resistance values.

show abstract

Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction

Cited by 3 publications

References 20 publications

Real-Time Switching Dynamics in STT-MRAM

Real-Time Switching Dynamics in STT-MRAM

1T-NOR Flash memory after endurance degradation: An advanced TCAD simulation

STATE: A Test Structure for Rapid Prediction of Resistive RAM Electrical Parameter Variability

Contact Info

Product

Resources

About