“…4,5 However, the a-Si:H layers are typically grown by capital intensive plasma-enhanced chemical vapor deposition (PECVD) system using flammable and explosive SiH 4 as a precursor. 6 Besides, the heavily doped amorphous silicon layer with a high absorption coefficient leads to considerable parasitic absorption 7,8 and, in turn, a decreased short circuit current density (J SC ). Dopant-free CSCs, including electron-transport layers (ETLs), such as TiO 2 , 9,10 SnO 2 , 11,12 TaN X , 13 and TiN, 14 and hole-transport layers (HTLs), such as NiO, 15,16 MoO 3 , 17−19 WO 3 , 20,21 and V 2 O 5 , 22,23 can be synthesized using low-cost deposition processes.…”