When the temperature increases, the efficiency of solar cells decreases, so the construction and design of photovoltaic devices with a cooling system from solar cells instead of solar panels is one of the most important tasks today. Therefore, in this scientific work, various forms of photoelectric devices in 3D format that can cool themselves by rotating around their own axis were studied. In these devices, mainly triangular and rectangular solar cells are used, so the effect of the cross-sectional shape on the photoelectric parameters of monocrystalline and polycrystalline silicon-based solar cells has been studied experimentally and with simulation. The results showed that polycrystalline silicon-based solar cells can be cut rectangular and used in the manufacture of prism-shaped photovoltaic devices, as well as monocrystalline silicon-based solar cells can be used in triangular cutting and in the manufacture of pyramid-shaped photovoltaic devices. Based on these results, a hexagonal prism-shaped photoelectric device made of a rectangular polycrystalline siliconbased solar cell was studied experimentally. The surface temperature of the device was 50 C without rotation and the open circuit voltage was 13.12 V. In the range of 0-6 rad/s of rotation speed, the open circuit voltage of the device increased sharply by 0.36 V and the surface temperature decreased by 9.4 C.
In this article, the experimental analysis of possibility of use of deformation of a crystal lattice of silicon for increase of efficiency of photoelectric transformation of energy made . For the first time the flex - photovoltaic (FFV) effect in silicon p - n - structures found out at influence of local mechanical pressure on the frontal surface. Laws of display of FFV effect depending on size of local pressure force and intensity of photoexcitation defined. Statistical processing of experimenta l data by a metho d of the least squares is executed and the new empirical formula for experimentally certain of dependence of short circuit photocurrent of silicon structure on the local mechanical pressure created on frontal surface on various distances from a contact str ip is received
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