Pushing the scaling limits of embedded non-volatile memories with high-K materials

Duuren, M. van; Schaijk, R. van; Slotboom, M.; Tello, Pablo G.; Akil, N.; Miranda, A.H.; Golubović, D.S.

doi:10.1109/icicdt.2006.220786

Cited by 4 publications

(1 citation statement)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In order to further reduce the interpoly (IPD) Equivalent Oxide Thickness (EOT), and to obtain a higher coupling ratio, one might replace the nitride by high-k materials. Demonstrations have already been presented in the literature showing improved program/erase performance with reduced applied voltages due to a coupling ratio enhancement [2] . In particular, HfAlO layers offer a good compromise between HfO 2 and Al 2 O 3 in terms of coupling properties, insulating capabilities and thermal stability [3,4] .…”

Section: Introductionmentioning

confidence: 99%

Effect of Nitridation for High-K Layers by ALCVDTM in Order to Decrease the Trapping in Non Volatile Memories

et al. 2007

View full text Add to dashboard Cite

In non-volatile memories, high-k materials such as Al2O3, HfO2, and hafnium aluminates are good candidates as interpoly layers. In order to decrease the parasitic trapping of the interpoly stack, the effect of post deposition nitridation (PDN) on different high-κ films was investigated. Several characterizations were performed on those films such as Angle Resolved X-ray Photo-electron Spectroscopy (AR-XPS), Auger Electron Spectroscopy (AES), Attenuated Total Reflection - Fourier Transform Infrared spectroscopy (ATR-FTIR) and Vacuum UltraViolet Spectroscopy Ellipsometry (VUV-SE). A correlation between the nitrogen incorporation and the crystallization was demonstrated. Al-rich films remain amorphous after PDN, with an incorporation of nitrogen in the film volume. Meanwhile, Hf-rich films crystallized after PDN, with nitrogen incorporated only at the high-κ / Si substrate interface. Also nitrogen increases the crystallization temperature onset, which leads to a reduction of charge trapping after high temperature spike anneals. Nitrided amorphous hafnium aluminate films are good candidates as interpoly layer.

show abstract

Section: Introductionmentioning

confidence: 99%