Purification methods of Cd, Te and CdTe and periodicity of segregation coefficients of admixtures

Kuchař, Lumír; Drápala, Jaromír; Luňáček, Jiří

doi:10.1016/0022-0248(95)00618-4

Cited by 41 publications

(10 citation statements)

References 8 publications

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“…Effective cleaning of bulk CdTe crystals from some types of impurities by their gettering in second phase inclusions was reported in [26,27]. Considering low value of segregation coefficient of chromium in CdTe [28], it is reasonable to suppose that its gettering in Te-rich particles mainly originates from the segregation mechanism during cooling process.…”

mentioning

confidence: 97%

Structural and compositional investigations of vapour grown CdTe:Cr single crystals

Popovych

Sagan

Bester

et al. 2015

Journal of Crystal Growth

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mentioning

confidence: 97%

Structural and compositional investigations of vapour grown CdTe:Cr single crystals

Popovych

Sagan

Bester

et al. 2015

Journal of Crystal Growth

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“…Taking into account that the segregation coefficient of Cr in CdTe is less than unity [3], the mentioned peculiarities can be explained by inhomogeneous distribution of the dopant in the grown crystal. The higher Cr impurity concentration at the beginning of the ingot can be caused by the concentrated overcooling at the crystallization front.…”

Section: Resultsmentioning

confidence: 99%

Influence of Cr doping on optical and photoluminescent properties of CdTe

Ilashchuk¹

2009

Semicond. phys. quantum electron. optoelectron.

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Spectra of transmission and low-temperature photoluminescence of CdTe:Cr crystals have been investigated for concentrations of the doping impurity (Cr) from 1•10 17 to 4•10 19 cm-3 in the melt. We have found additional absorption bands with maxima at  1  1.9 μm and  2  7.0 μm induced by the presence of this dopant. An additional band of radiative recombination in the vicinity of 1.22 eV is caused by electron transitions from the conduction band to the deep donor levels E v +(0.36-0.38) eV, which correspond to the Cr 1+ defect entering to clusters. We have also observed the shift of CdTe:Cr absorption edge to the longwave region. This shift is caused by strong lattice deformation near the Cr 2+ impurity position due to the static Jahn-Teller effect.

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“…under Cd-saturated overpressure [10], which well-corresponds to the concentration calculated from the charged In-doping concentration and position of the sample in ingot using the segregation coefficient of 0.13 [11]. The electron concentration of annealed In-doped sample(A) cm was lower than the upper limit of the In concentration determined by GDMS method.…”

Section: Methodsmentioning

confidence: 99%

Preparation of Inclusion and Precipitate Free Semi-Insulating CdTe

Belas

Bugár

Grill

et al. 2009

IEEE Trans. Nucl. Sci.

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Annealing conditions used for the preparation of semi-insulating CdTe after elimination of inclusions and precipitates are discussed. Second phase defects are eliminated by post-growth stoichiometric annealing and the semi-insulating CdTe is prepared by re-annealing under Te or Cd overpressure. In case of In-doped samples with high In concentration, semi-insulating CdTe with resistivity approximately 10 9 cm was prepared by annealing under Te overpressure. In-situ high temperature measurement of the electrical conductivity and Hall coefficient is used to find annealing conditions for undoped and slightly In-doped CdTe. The dominant extrinsic acceptor level with a concentration of N A = 4 10 15 cm 3 was determined and Cd-rich annealing was used for the preparation of semi-insulating CdTe.

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Purification methods of Cd, Te and CdTe and periodicity of segregation coefficients of admixtures

Cited by 41 publications

References 8 publications

Structural and compositional investigations of vapour grown CdTe:Cr single crystals

Structural and compositional investigations of vapour grown CdTe:Cr single crystals

Influence of Cr doping on optical and photoluminescent properties of CdTe

Preparation of Inclusion and Precipitate Free Semi-Insulating CdTe

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