Influence of Cr doping on optical and photoluminescent properties of CdTe

Abstract

Spectra of transmission and low-temperature photoluminescence of CdTe:Cr crystals have been investigated for concentrations of the doping impurity (Cr) from 1•10 17 to 4•10 19 cm-3 in the melt. We have found additional absorption bands with maxima at  1  1.9 μm and  2  7.0 μm induced by the presence of this dopant. An additional band of radiative recombination in the vicinity of 1.22 eV is caused by electron transitions from the conduction band to the deep donor levels E v +(0.36-0.38) eV, which correspond to the Cr 1+ defect entering to clusters. We have also observed the shift of CdTe:Cr absorption edge to the longwave region. This shift is caused by strong lattice deformation near the Cr 2+ impurity position due to the static Jahn-Teller effect.

The effect of Cr3+doping on the crystalline perfection and optical properties of zinc tris(thiourea)sulfate, a nonlinear optical material

“…where is the absorption coefficient, is the frequency of the incident radiation, h is Planck's constant, E g represents the optical band gap and A is a constant (Ilashchuk et al, 2010). E g was evaluated by extrapolating the linear part of the plots to the abscissa (h), as shown in the figure.…”