Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

Socol, G.; Socol, Marcela; Stefan, N.; Axente, E.; Popescu-Pelin, Gianina; Crǎciun, D.; Duta, L.; Mihailescu, Ion N.; Mihăilescu, I. N.; Stănculescu, Anca; Visan, D.; Sava, V.; Gâlcă, A.C.; Luculescu, C.; Crăciun, V.

doi:10.1016/j.apsusc.2012.02.148

Cited by 65 publications

(38 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Tensile stresses in AZO and ITO films on PET films and crack formation have been observed by XRD and AFM measurements[16,32]. A reduction of crack formation in AZO/PET films was observed for large target-substrate distances in PLD[10]. For thicker AZO films the stress relaxation was apparently not sufficient to avoid the cracking of the oxide layer (Fig.…”

mentioning

confidence: 92%

“…The growth of high-quality AZO thin films is challenging because of stability issues regarding the polymers. Al-doped ZnO films were deposited on polyethylene terephthalate and other polymer substrates by PLD [7,8,9,10,11] and sputtering techniques [12,13,14,15,16]. Organic solar cells (OSC) with rapidly advancing solar radiation-to-electric power conversion efficiencies [17,18,19,20,21] are very promising for photovoltaic devices in energy conversion applications.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Transparent conductive ZnO layers on polymer substrates: Thin film deposition and application in organic solar cells

et al. 2015

View full text Add to dashboard Cite

mentioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Transparent conductive ZnO layers on polymer substrates: Thin film deposition and application in organic solar cells

et al. 2015

View full text Add to dashboard Cite

“…For example, transparent conducting oxides (TCOs) are used as essential materials for photovoltaic devices, 1 flexible electronics, 2 and optoelectronic applications. 3 TCOs such as indium tin oxide (ITO), 4 F-doped tin oxide (FTO), 5 and Al-doped zinc oxide 6 exhibit large conductivities with their typical carrier densities larger than 10 20 cm −3 in the degenerately doped regime.…”

mentioning

confidence: 99%

High electron mobility in epitaxial SnO2−x in semiconducting regime

et al. 2015

View full text Add to dashboard Cite

We investigated the electronic transport properties of epitaxial SnO2−x thin films on r-plane sapphire substrates. The films were grown by pulsed laser deposition technique and its epitaxial growth direction was [101] and the in-plane alignment was of SnO2−x [010]//Al2O3[12̄10]. When the SnO2−x films were grown in the oxygen pressure of 30 mTorr, we have found the electron mobility of the 30 nm thick SnO2−x thin films strongly dependent on the thicknesses of the fully oxidized insulating SnO2 buffer layer. When the buffer layer thickness increased from 100 nm to 700 nm, the electron mobility of values increased from 23 cm2 V−1 s−1 to 106 cm2 V−1 s−1 and the carrier density increased from 9 × 1017 cm−3 to 3 × 1018 cm−3, which we attribute to reduction of large density of dislocations as the buffer layer thickness increases. In addition, we studied the doping dependence of the electron mobility of SnO2−x thin films grown on top of 500 nm thick insulating SnO2 buffer layers. The oxygen vacancy doping level was controlled by the oxygen pressure during deposition. As the oxygen pressure increased to 47.5 mTorr, the carrier density was found to decrease to 9.1 × 1016 cm−3 and the electron mobility values to 13 cm2 V−1 s−1, which is consistent with the dislocation limited transport properties. We also checked the conductance change of the SnO2−x during thermal annealing cycles, demonstrating unusual stability of its oxygen. The correlation between the electronic transport properties and microstructural defects investigated by the transmission electron microscopy was drawn. The excellent oxygen stability and high electron mobility of low carrier density SnO2−x films demonstrate its potential as a transparent oxide semiconductor.

show abstract

“…The sample ITO1 presents the lowest transparency (70-75%) that is being attributed to the presence of some defects (cracks) generated during a deposition process at this distance and the defects that scatter the light. In PLD, the deposition appears as species with an increased kinetic energy that can affect the deposition substrate and the way in which this takes place is the nucleation process [1]. Defects can appear due to the energy transferred through the collision of the energetic items such as atoms, ions, and molecules, with the substrate atoms or with the atoms previously deposited.…”

Section: Indium Tin Oxide (Ito)mentioning

confidence: 99%

“…An excimer laser with KrF* (model COMPex-Pro 205, Lambda Physics-Coherent), λ = 248 nm, and τ FWHM = 25 nm was used to irradiate the ITO target (SCI engineered materials) in an ultrahigh vacuum chamber [1]. The depositions were made at room temperature, at 2 J/cm 2 laser fluence, and with 10 Hz repetition rate.…”

Section: Indium Tin Oxide (Ito)mentioning

confidence: 99%

Laser Prepared Thin Films for Optoelectronic Applications

Socol¹,

Socol²,

Preda³

et al. 2017

Nanoscaled Films and Layers

View full text Add to dashboard Cite

Laser techniques such as pulsed laser deposition, combinatorial pulsed laser deposition, and matrix-assisted pulsed laser evaporation were used to deposit thin films for optoelectronic applications. High-quality transparent conductor oxide films ITO, AZO, and IZO were deposited on polyethylene terephthalate by PLD, an important experimental parameter being the target-substrate distance. The TCO films present a high transparency (>95%) and a reduced electrical resistivity (5 × 10 −4 Ωcm) characteristics very useful for their integration in the flexible electronics. In x Zn 1−x O films with a compositional library were obtained by CPLD. These films are featured by a high optical transmission (>95%), the lowest resistivity (8.6 × 10 −4 Ωcm) being observed for an indium content of about 44-49 at.%. Organic heterostructures based on arylenevinylene oligomers (P78 and P13) or arylene polymers (AMC16 and AMC22) were obtained by MAPLE. In the case of ITO/P78/Alq3/Al heterostructures, a higher current value is obtained when the film thickness increases. Also, a photovoltaic effect was observed for heterostructures based on AMC16 or AMC22 deposited on ITO covered by a thin layer of PEDOT:PSS. Due to their optical and electrical properties, such organic heterostructures can be interesting for the organic photovoltaic cells (OPV) applications.

show abstract

Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

Cited by 65 publications

References 35 publications

Transparent conductive ZnO layers on polymer substrates: Thin film deposition and application in organic solar cells

Transparent conductive ZnO layers on polymer substrates: Thin film deposition and application in organic solar cells

High electron mobility in epitaxial SnO2−x in semiconducting regime

Laser Prepared Thin Films for Optoelectronic Applications

Contact Info

Product

Resources

About