No abstract

The hydration water layer (HWL), a ubiquitous form of water on the hydrophilic surfaces, exhibits anomalous characteristics different from bulk water and plays an important role in interfacial interactions. Despite extensive studies on the mechanical properties of HWL, one still lacks holistic understanding of its energy dissipation, which is critical to characterization of viscoelastic materials as well as identification of nanoscale dissipation processes. Here we address energy dissipation of nanoconfined HWL between two atomically flat hydrophilic solid surfaces (area of ~120 nm2) by small amplitude-modulation, noncontact atomic force microscopy. Based on the viscoelastic hydration-force model, the average dissipation energy is ~1 eV at the tapping amplitude (~0.1 nm) of the tip. In particular, we determine the accurate HWL thickness of ~6 layers of water molecules, as similarly observed on biological surfaces. Such a long-range interaction of HWL should be considered in the nanoscale phenomena such as friction, collision and self-assembly.

We investigated the electronic transport properties of epitaxial SnO2−x thin films on r-plane sapphire substrates. The films were grown by pulsed laser deposition technique and its epitaxial growth direction was [101] and the in-plane alignment was of SnO2−x [010]//Al2O3[12̄10]. When the SnO2−x films were grown in the oxygen pressure of 30 mTorr, we have found the electron mobility of the 30 nm thick SnO2−x thin films strongly dependent on the thicknesses of the fully oxidized insulating SnO2 buffer layer. When the buffer layer thickness increased from 100 nm to 700 nm, the electron mobility of values increased from 23 cm2 V−1 s−1 to 106 cm2 V−1 s−1 and the carrier density increased from 9 × 1017 cm−3 to 3 × 1018 cm−3, which we attribute to reduction of large density of dislocations as the buffer layer thickness increases. In addition, we studied the doping dependence of the electron mobility of SnO2−x thin films grown on top of 500 nm thick insulating SnO2 buffer layers. The oxygen vacancy doping level was controlled by the oxygen pressure during deposition. As the oxygen pressure increased to 47.5 mTorr, the carrier density was found to decrease to 9.1 × 1016 cm−3 and the electron mobility values to 13 cm2 V−1 s−1, which is consistent with the dislocation limited transport properties. We also checked the conductance change of the SnO2−x during thermal annealing cycles, demonstrating unusual stability of its oxygen. The correlation between the electronic transport properties and microstructural defects investigated by the transmission electron microscopy was drawn. The excellent oxygen stability and high electron mobility of low carrier density SnO2−x films demonstrate its potential as a transparent oxide semiconductor.