Transparent conductive ZnO layers on polymer substrates: Thin film deposition and application in organic solar cells

Dosmailov, M.; Leonat, Lucia; Klomfar, Jaroslav; Roth, D.; Bauer, Péter; Scharber, Markus C.; Sariçiftçi, Niyazi Serdar; Pedarnig, J.D.

doi:10.1016/j.tsf.2015.08.015

Cited by 41 publications

(22 citation statements)

References 40 publications

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“…This feature would also be interesting for thin-film transistors and other electronic devices that do not show light-induced degradation/light response in the visible-to-ultraviolet region. As a-(Ga 1-x Zn x )O y films are fabricated at room temperature and have flexible tunability of the band gap and the VBM level, they would be applicable to design hole blocking layers in flexible optoelectronic devices [30,31].…”

Section: Discussionmentioning

confidence: 99%

Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O

et al. 2016

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We fabricated amorphous oxide semiconductor films, a-(Ga 1-x Zn x )O y , at room temperature on glass, which have widely tunable band gaps (E g ) ranging from 3.47-4.12 eV. The highest electron Hall mobility~7 cm 2 V −1 s −1 was obtained for E g =~3.8 eV. Ultraviolet photoemission spectroscopy revealed that the increase in E g with increasing the Ga content comes mostly from the deepening of the valence band maximum level while the conduction band minimum level remains almost unchanged. These characteristics are explained by their electronic structures. As these films can be fabricated at room temperature on plastic, this achievement extends the applications of flexible electronics to opto-electronic integrated circuits associated with deep ultraviolet region.

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Section: Discussionmentioning

confidence: 99%

Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O

et al. 2016

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“…thermal oxidation in air of a high purity Zn sheet, pulsed laser deposition on PET [32], and sputter deposition on glass. Time-of-flight elastic recoil detection (TOF-ERD) measurements at Uppsala University yielded the expected stoichiometry and impurity concentrations below ~ 2 %.…”

Section: [Ev]mentioning

confidence: 99%

Electronic Stopping of Slow Protons in Oxides: Scaling Properties

et al. 2017

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Electronic stopping of slow protons in ZnO, VO2 (metal and semiconductor phases), HfO2 and Ta2O5 was investigated experimentally. As a comparison of the resulting stopping cross sections (SCS) to data for Al2O3 and SiO2 reveals, electronic stopping of slow protons does not correlate with electronic properties of the specific material such as band gap energies.Instead, the oxygen 2p states are decisive, as corroborated by DFT calculations of the electronic densities of states. Hence, at low ion velocities the SCS of an oxide primarily scales with its oxygen density.

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“…The adoption of the other experimental condition of PDA of 400 ∘ C was used to obtain an acceptable resistance value. It is thus suggested that 300 W of plasma power ( 3), an inserted 10 nm thick Ag film ( 2), and PDA temperature of 400 ∘ C ( 3) could be the optimal conditions based on the consideration of processing economics.…”

Section: Prediction and Confirmation Of Zaz Stacked Layer Propertiesmentioning

confidence: 99%

“…Zinc oxide (ZnO) is a compound semiconductor with a direct bandgap of 3.2∼3.37 eV and a lager exciton binding energy of 60 meV at room temperature (RT), which results in potential applications in optoelectronics and solar cells [1][2][3]. A highly conductive and transparent ZnO layer can be prepared by doping with group IIIA elements, such as B, Al, Ga, and In [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Improved Indium-Free Transparent ZnO/Metal/ZnO Electrode through a Statistical Experimental Design Method

Chen

Peng

Chang

et al. 2016

Advances in Materials Science and Engineering

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ZnO/Ag/ZnO (ZAZ) and ZnO/Cu/ZnO (ZCZ) were prepared. The dependence of crystalline, electrical, and optical properties for the multilayer on the postdeposition annealing (PDA) was studied. After PDA of 300°C for 20 min, the diffusion of Cu in ZnO occurs; this result is responsible for the increasing resistance of the annealed ZCZ. Ag with a thickness of 10 nm was deposited upon ZnO. The interface of ZnO and Ag is clearly revealed by high resolution transmission electron microscopy. The crystalline of ZnO and Ag films in the ZAZ with a sheet resistance (Rs) down to 4.17 Ω/sq. The ZAZ layer shows a better thermal stability (up to 400°C) than that of the ZCZ ones. The PDA degraded slightly the optical transmittance and increases the conductivity of ZAZ layer. The figure of merit (FOM) is applied to analysis of the ZAZ layer. The PDA can enhance the FOM of the ZAZ with Ag thickness >8 nm. The resultingRsand the transmittance ZAZ layers were analyzed by the Taguchi method to obtain the appropriate parameters. The optimized ZAZ has been verified with aRsof 2.3 Ω/sq, a high transmittance (71%), and the optimal FOM of 1.41 × 10−2 Ω−1.

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Transparent conductive ZnO layers on polymer substrates: Thin film deposition and application in organic solar cells

Cited by 41 publications

References 40 publications

Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O

Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O

Electronic Stopping of Slow Protons in Oxides: Scaling Properties

Improved Indium-Free Transparent ZnO/Metal/ZnO Electrode through a Statistical Experimental Design Method

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