Electronic energy loss of light ions transmitted through nanometer films of Al has been studied at very low ion velocities. For hydrogen, the electronic stopping power S is found to be perfectly proportional to velocity, as expected for a free electron gas. For He, the same is anticipated, but S shows a transition between two distinct regimes, in both of which S is velocity proportional-however, with remarkably different slopes. This finding can be explained as a consequence of charge exchange in close encounters between He and Al atoms, which represents an additional energy loss channel.

The electronic stopping cross sections (SCS) of Ta and Gd for slow protons have been investigated experimentally. The data are compared to the results for Pt and Au, to learn how electronic stopping in transition and rare earth metals correlates with features of the electronic band structures. The extraordinarily high SCS observed for protons in Ta and Gd cannot be understood in terms of a free electron gas model, but are related to the high densities of both occupied and unoccupied electronic states in these metals.

Electronic stopping of slow protons in ZnO, VO2 (metal and semiconductor phases), HfO2 and Ta2O5 was investigated experimentally. As a comparison of the resulting stopping cross sections (SCS) to data for Al2O3 and SiO2 reveals, electronic stopping of slow protons does not correlate with electronic properties of the specific material such as band gap energies.Instead, the oxygen 2p states are decisive, as corroborated by DFT calculations of the electronic densities of states. Hence, at low ion velocities the SCS of an oxide primarily scales with its oxygen density.

The revival of interest in Ge1−xSnx alloys with x ≥ 10% is mainly owed to the recent demonstration of optical gain in this group-IV heterosystem. Yet, Ge and Sn are immiscible over about 98% of the composition range, which renders epilayers based on this material system inherently metastable. Here, we address the temperature stability of pseudomorphic Ge1−xSnx films grown by molecular beam epitaxy. Both the growth temperature dependence and the influence of post-growth annealing steps were investigated. In either case we observe that the decomposition of epilayers with Sn concentrations of around 10% sets in above ≈230 °C, the eutectic temperature of the Ge/Sn system. Time-resolved in-situ annealing experiments in a scanning electron microscope reveal the crucial role of liquid Sn precipitates in this phase separation process. Driven by a gradient of the chemical potential, the Sn droplets move on the surface along preferential crystallographic directions, thereby taking up Sn and Ge from the strained Ge1−xSnx layer. While Sn-uptake increases the volume of the melt, single-crystalline Ge becomes re-deposited by a liquid-phase epitaxial process at the trailing edge of the droplet. This process makes phase separation of metastable GeSn layers particularly efficient at rather low temperatures.

In recent energy loss measurements, band structure effects in electronic stopping have been observed for materials with finite excitation thresholds, for example, noble metals such as Cu and Au. To further investigate the influence of the position of the d band relative to the Fermi edge, electronic stopping of hydrogen and helium ions in Ag and Pt was determined. For Ag, the electronic stopping power exhibits a velocity dependence similar to Cu and Au. No particular effect due to the comparatively large d-band offset in Ag is found. In the case of Pt, the electronic stopping power is virtually velocity proportional for H + ions and exhibits a distinct velocity dependence for He + ions. For hydrogen the results are compatible with modeling the conduction band as a free electron gas with an energy-dependent effective number of electrons. For He + , however, the observed effects point towards an additional energy loss mechanism, e.g., by charge-exchange processes.