Pulse-induced alternation from bipolar resistive switching to unipolar resistive switching in the Ag/AgO_x/Mg_0.2Zn_0.8O/Pt device

Abstract

Electric field-induced resistive switching (RS) and related effects are studied for the ZnO-based device Ag/AgO x /Mg 0.2 Zn 0.8 O/Pt. The system exhibits a bipolar resistive switching (BRS) for the current (I)-voltage (V) cycles, with the set/reset voltage distributing in a narrow region around 0.15 V/0.16 V. The high to low resistance ratio is ∼10, and the resistive state is well retainable. However, the RS becomes unipolar (unipolar resistive switching-URS) when electric pulses are applied, with a fairly wide distribution of the set/reset voltages, though the resistive state is still well retainable. It was further found that a backward transition from the URS to the BRS state can be occasionally triggered by simply performing I-V cycling in the negative branch, which shows the strong competition of the BRS and URS states. Both the BRS and URS states were stable and reproducible over 90 cycles. Possible mechanisms for the BRS and URS state and their mutual transition were discussed.

Bipolar and unipolar resistive switching modes in Pt/Zn0.99Zr0.01O/Pt structure for multi-bit resistance random access memory

“…11 In this work, we report the coexistence of BRS and URS modes in the Zirconium-doped ZnO thin films. After the forming process, this device with the URS behavior shows either URS mode in the same direction or BRS mode in the opposite direction during the reset process.…”

Memristors: A Journey from Material Engineering to Beyond Von-Neumann Computing

“…This migration of anions will result in the formation and rupture of the conductive filament. The insulating material in VCM devices includes a wide range of binary metal oxides such as TiOx [23], HfOx [4] and AgOx [24], perovskites, such as SrTiO3 [25] and BiFeO3 [26], some complex metal oxides, e.g. InGaZnO, some non-metal oxides such as SiOx [27] and GO [28] , metal nitrides such as ZrN [29], among others.…”

“…These constants represent how fast the state changes when the voltage across the device is exceeds the threshold. The constant η in (24) defines the direction of the motion of x according to the voltage polarity. If η = 1/η = −1, applying a positive voltage above the threshold will increase/decrease the value of x.…”

Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell

“…PMC device having a high-resistive storage layer is compulsory to produce switching characteristics at low operation current. Several methods have been developed to alter the switching characteristics in ZnO-based PMC devices; such as, by introducing a dopant(s) [ 13 – 18 ], controlling the film growth [ 19 , 20 ], adding a buffer or barrier layer [ 16 , 21 ], inserting a nanorod layer [ 22 , 23 ], and stacking with another material(s) [ 24 , 25 ]. However, those approaches still require a complicated and time-consuming fabrication process.…”