Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell

Simanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Lin, Chun Chieh; Tseng, Tseung‐Yuen

doi:10.1186/s11671-018-2743-7

Cited by 29 publications

(15 citation statements)

References 46 publications

(50 reference statements)

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“…It can be seen that the device-C has relatively high slopes of R on and R off distributions and a small coefficient of variation σ/μ. In consequence, stable and uniform distributions of LRS and HRS comparing with the other devices can be obtained by the gradual SET and RESET operations, this can be attributed to the perpendicular ZnO grain orientation under Li-doped synergistic effect being beneficial for ensuring that the formation and rupture of the conducting filaments caused by the carriers drift along the (002) grain boundaries under an electric field [35]. Thus, it is possible for the device-C to realize a better high-switching uniformity of the LRS and HRS resistance, a high switching current ratio, low set and reset voltages.…”

Section: Resultsmentioning

confidence: 99%

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Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Zhao

et al. 2019

Materials

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A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

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Section: Resultsmentioning

confidence: 99%

“…The above analysis indicates that the formation and rupture of the Ag based conduct filaments (CFs) are responsible for the resistive switching behaviors of devices [35]. The schematics of the resistive switching mechanism models under different applied DC voltages are shown in Figure 8.…”

Section: Resultsmentioning

confidence: 99%

Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Zhao

et al. 2019

Materials

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“…The conductive-bridge type memristor utilizes the electrochemical metallization process where the atoms from the active electrode (Cu, Ag, or Ni) drift to the switching layer and form the conduction bridge (filament) [22,23]. A diffusion barrier is usually employed in this type of memristor device to control the atomic drift [24,25].…”

Section: Cation Drift Barrier Layermentioning

confidence: 99%

Practical Approach to Induce Analog Switching Behavior in Memristive Devices: Digital-to-Analog Transformation

Simanjuntak¹,

Chandrasekaran²,

Panda³

et al. 2021

Memristor - An Emerging Device for Post-Moore’s Computing and Applications

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The capability of memristor devices to perform weight changes upon electrical pulses mimics the analogous firing mechanism in biological synapses. This capability delivers the potential for neuromorphic computing and pushes renewed interests in fabricating memristor with analog characteristics. Nevertheless, memristors could often exhibit digital switching, either during the set, reset, or both processes that degenerate their synaptic capability, and nanodevice engineers struggle to redesign the device to achieved analog switching. This chapter overviews some important techniques to transform the switching characteristics from digital to analog in valence change and electrochemical metallization types memristors. We cover physical dynamics involving interfacial diffusion, interfacial layer, barrier layer, deposition, and electrode engineering that can induce digital-to-analog switching transformation in memristor devices.

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“…Massive production of RRAMs has been limited by their inherent stochastic features, such as probabilistic switching, inter-and intra-device variability and RTN [10]. Extensive research effort is currently devoted to overcoming these limitations [11,12]. However, the very same challenges provide interesting features for the generation of random numbers in hardware security applications [13].…”

Section: Introductionmentioning

confidence: 99%

RRAM Random Number Generator Based on Train of Pulses

et al. 2021

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In this paper, the modulation of the conductance levels of resistive random access memory (RRAM) devices is used for the generation of random numbers by applying a train of RESET pulses. The influence of the pulse amplitude and width on the device resistance is also analyzed. For each pulse characteristic, the number of pulses required to drive the device to a particular resistance threshold is variable, and it is exploited to extract random numbers. Based on this behavior, a random number generator (RNG) circuit is proposed. To assess the performance of the circuit, the National Institute of Standards and Technology (NIST) randomness tests are applied to evaluate the randomness of the bitstreams obtained. The experimental results show that four random bits are simultaneously obtained, passing all the applied tests without the need for post-processing. The presented method provides a new strategy to generate random numbers based on RRAMs for hardware security applications.

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Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell

Cited by 29 publications

References 46 publications

Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Practical Approach to Induce Analog Switching Behavior in Memristive Devices: Digital-to-Analog Transformation

RRAM Random Number Generator Based on Train of Pulses

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