Bipolar and unipolar resistive switching modes in Pt/Zn0.99Zr0.01O/Pt structure for multi-bit resistance random access memory

Xu, Daolin; Xiong, Ying; Tang, Minghua; Zeng, Binjian; Xiao, Yongguang

doi:10.1063/1.4875383

Cited by 36 publications

(19 citation statements)

References 23 publications

(18 reference statements)

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“…[1][2][3][4] Based on the polarity of the applied voltages for switching, resistive switching characteristics can be classified into two types, i.e., bipolar and unipolar. 1,2,5 For the bipolar resistance switching, a resistance changing from high resistance state (HRS) to low resistance state (LRS) occurs at certain voltage polarity, and an inverse process from LRS to HRS at reversed voltage polarity. In contrast, for the unipolar resistance switching, the switching procedures do not depend on the polarity of the voltage and current signals.…”

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confidence: 99%

“…[1][2][3][4][5][6] As a binary metal oxide, gallium oxide, with a wide band gap of $4.9 eV, is considered as one of ideal candidates for RRAM because of its intrinsic high resistance characteristic and extraordinarily sensitive conductivity to the oxygen. [7][8][9] In recent years, reversible bipolar resistance switching behaviors in gallium oxide thin films were obtained and investigated.…”

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confidence: 99%

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Unipolar resistive switching behavior of amorphous gallium oxide thin films for nonvolatile memory applications

Guo

et al. 2015

Applied Physics Letters

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Amorphous gallium oxide thin film with heavy oxygen deficiency was deposited on Pt/Ti/SiO2/Si substrate by pulsed laser deposition in order to explore the resistive switching behavior of the Pt/Ga2O3-x/Pt sandwich structure. A well unipolar resistive switching behavior was obtained in this structure, which exhibits a high resistance ratio of OFF/ON up to 104, non-overlapping switching voltages, and excellent repeatability and retention. Both I-V relation plots of ON and OFF states and temperature dependent variation resistances indicate that the observed resistive switching behavior can be explained by the formation/rupture of conductive filaments formed out of oxygen vacancies.

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confidence: 99%

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Unipolar resistive switching behavior of amorphous gallium oxide thin films for nonvolatile memory applications

Guo

et al. 2015

Applied Physics Letters

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“…In recent years, remarkable improvements have been made to understand the physics of RRAM devices4. Based on the polarity of applied voltages of switching, resistive switching (RS) characteristics between high resistance state (HRS) and low resistance state (LRS) can be classified into two types, i.e., unipolar and bipolar478. For unipolar resistive switching (URS), the set (HRS to LRS) and reset (LRS to HRS) processes happen at the same polarity.…”

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confidence: 99%

Reversible voltage dependent transition of abnormal and normal bipolar resistive switching

Wang

Chen

et al. 2016

Sci Rep

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Clear understanding the mechanism of resistive switching is the important prerequisite for the realization of high performance nonvolatile resistive random access memory. In this paper, binary metal oxide MoOx layer sandwiched by ITO and Pt electrodes was taken as a model system, reversible transition of abnormal and normal bipolar resistive switching (BRS) in dependence on the maximum voltage was observed. At room temperature, below a critical maximum voltage of 2.6 V, butterfly shaped I-V curves of abnormal BRS has been observed with low resistance state (LRS) to high resistance state (HRS) transition in both polarities and always LRS at zero field. Above 2.6 V, normal BRS was observed, and HRS to LRS transition happened with increasing negative voltage applied. Temperature dependent I-V measurements showed that the critical maximum voltage increased with decreasing temperature, suggesting the thermal activated motion of oxygen vacancies. Abnormal BRS has been explained by the partial compensation of electric field from the induced dipoles opposite to the applied voltage, which has been demonstrated by the clear amplitude-voltage and phase-voltage hysteresis loops observed by piezoelectric force microscopy. The normal BRS was due to the barrier modification at Pt/MoOx interface by the accumulation and depletion of oxygen vacancies.

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“…Among various metal oxides, ZnO has been investigated as an attractive material in the field of memory devices because of its low process temperature and large memory window. [21][22][23][24][25] However, pure ZnO films generally have high forming voltages. Therefore, we carried out Ag doping on a ZnO thin film for low-voltage operation of a selector device that does not require an initial forming process, because doping is an effective method to modify the material properties of ZnO thin films.…”

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confidence: 99%

Reliable current changes with selectivity ratio above 109 observed in lightly doped zinc oxide films

Han

Lee

2017

NPG Asia Mater

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Low-power operation of semiconductor devices is crucial for energy conservation. In particular, energy-efficient devices are essential in portable electronic devices to allow for extended use with a limited power supply. However, unnecessary currents always exist in semiconductor devices, even when the device is in its off state. To solve this problem, it is necessary to use switch devices that can turn active devices on and off effectively. For this purpose, high on/off current selectivity with ultra-low off-current and high on-current is required. Here, we report a novel switch behavior with over 10 9 selectivity, a high on-current density of 1 MA cm -2 , an ultra-low off-current density of 1 mA cm -2 , excellent thermal stability up to 250°C and abrupt turn-on with 5 mV per decade in solution-processed silver-doped zinc oxide thin films. The selection behavior is attributed to light doping of silver ions in zinc oxide films during electrochemical deposition to generate atomic-scale narrow conduction paths, which can be formed and ruptured at low voltages. Device simulation showed that the new selector devices may be used in ultra-highdensity memory devices to provide excellent operation margins and extremely low power consumption.

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Bipolar and unipolar resistive switching modes in Pt/Zn0.99Zr0.01O/Pt structure for multi-bit resistance random access memory

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Cited by 36 publications

References 23 publications

Unipolar resistive switching behavior of amorphous gallium oxide thin films for nonvolatile memory applications

Unipolar resistive switching behavior of amorphous gallium oxide thin films for nonvolatile memory applications

Reversible voltage dependent transition of abnormal and normal bipolar resistive switching

Reliable current changes with selectivity ratio above 109 observed in lightly doped zinc oxide films

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