Publisher's Note: “The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors” [Appl. Phys. Lett. 104, 033503 (2014)]

Abstract

Publisher's Note: "The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors" [Appl. Phys. Lett. 104, 033503 (2014)]

Deep traps in GaN-based structures as affecting the performance of GaN devices

“…The E2 trap was assigned to trapping in the gate edge/drain region. For AlGaN/GaN HEMTs with a thin low-Al AlGaN back barrier off-state pulsing revealed a prominent role of electron trapping in the back barrier that gave rise to the ''virtual gate'' formation below the channel in the drain access region [306]. The temperature measurements of detrapping again point to electron traps near E c À0.6 eV as the main culprits.…”

Determination of Suitable Indicators of AlGaN/GaN HEMT Wafer Quality Based on Wafer Test and Device Characteristics

“…Although AlGaN/GaN HEMTs have several advantages, the drain current cannot maintain the expected value when the high‐voltage off‐state bias is switched to the on state. This current collapse can be attributed to the surface states and defects in the epitaxial layers, which trap and detrap electrons during operation . Consequently, dynamic on‐state resistance and current collapse are the key problems that have limited the applications of such devices.…”

Device Characteristics of AlGaN/GaN HEMTs with p-GaN Cap Layer

“…2 Other studies have reported that the interface states at the insulator and semiconductor and that the traps at the epitaxial layers are problems that must be overcome. 3,4 A thin i-GaN cap layer is usually used to prevent oxidation and damage to the AlGaN barrier layer and maintain polarization for 2DEG purposes. However, device performance is still very sensitive to surface state filling during device processing.…”