Pseudomorphic InP/InGaAs Heterojunction Bipolar Transistors (PHBTs) Experimentally Demonstrating f&lt;sub&gt;T&lt;/sub&gt; = 765 GHz at 25&amp;amp;#x000B0;C Increasing to f&lt;sub&gt;T&lt;/sub&gt; = 845 GHz at -55&amp;amp;#x000B0;C

Snodgrass, William; Hafez, W.; Harff, N. E.; Feng, Milton

doi:10.1109/iedm.2006.346853

Cited by 41 publications

(20 citation statements)

References 6 publications

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“…At present, the highest f T is 765 GHz [7]. The epitaxial structure has a 12.5-nm-thick base and a 55-nm-thick collector.…”

Section: Hbtmentioning

confidence: 99%

Recent progress in compound semiconductor electron devices

Miyamoto

2016

IEICE Electron. Express

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Compound semiconductor electronic devices have the capability to provide high-speed operation as they have higher mobility than Si. At present, compound semiconductor devices are popular as parts of consumer electronics such as wireless communication devices or satellite television. Introduction of wide bandgap compound semiconductors has increased the use of compound semiconductor devices in base stations of cellular phone systems and as replacements for vacuum tubes. More recently, the research on InGaAs MOSFET has been directed towards realization of its potential as an alternative for silicon. This review explains the present commercialization of compound semiconductor devices in consumer electronics, and its state-of-art results such as the 529-GHz dynamic frequency divider using InGaAs heterojunction bipolar transistors, the 1-THz amplification provided by the InGaAs highelectron-mobility transistor (HEMT), and the power of 3 Wmm −1 provided by the GaN HEMT at 96 GHz. The InGaAs MOSFET as the next candidate for logic circuit components, is also explained.

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“…At present, the highest f T is 765 GHz [7]. The epitaxial structure has a 12.5-nm-thick base and a 55-nm-thick collector.…”

Section: Hbtmentioning

confidence: 99%

Recent progress in compound semiconductor electron devices

Miyamoto

2016

IEICE Electron. Express

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“…Due to the outstanding transport characteristics of III-V semiconductors, electronic devices such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transistors (HEMTs) based on these materials have demonstrated very high frequency response, approaching the THz regime [1][2][3]. For the design of these devices, an understanding of the band structure and corresponding quantum states for different epitaxial structures is important.…”

Section: Introductionmentioning

confidence: 99%

Self-consistent 1-D Schrödinger–Poisson solver for III–V heterostructures accounting for conduction band non-parabolicity

Wang

Asbeck

Taur

2010

Solid-State Electronics

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“…at current densities greater than ∼2 mA/μm 2 . The degradation in g m increases the C cb /g m charging time and significantly degrades the bandwidth of HBTs having f τ approaching or exceeding 500 GHz [6], [7]. We here analyze significant contributors to g m degradation in abrupt EB HBTs, including modulation of the EB electron injection barrier by applied bias V be , drops in the electron quasi-Fermi level in the emitter space-charge region, and quantum-mechanical reflection and degenerate electron injection at the EB interface.…”

Section: Introductionmentioning

confidence: 99%

Transconductance Degradation in Near-THz InP Double-Heterojunction Bipolar Transistors

Jain

Rodwell

2011

IEEE Electron Device Lett.

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We examine the relationship between transconductance g m and emitter current density J E for InP/InGaAs/InP abrupt emitter-base (EB) double-heterojunction bipolar transistors operating at high J E . High J E is needed to increase g m for reduced C/g m delays. We observe a significant degradation in measured g m below qI E /kT with increased J E . This degradation primarily results from the Fermi-Dirac statistics governing current injection at high current densities and from quantum-mechanical reflection at the EB junction arising from changes in the electron effective mass and in the conduction band potential. Transconductance is further reduced by gradients in the quasi-Fermi level in the EB space-charge region and by modulation of the heterointerface energy barrier by the applied bias.

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Pseudomorphic InP/InGaAs Heterojunction Bipolar Transistors (PHBTs) Experimentally Demonstrating f<sub>T</sub> = 765 GHz at 25&#x000B0;C Increasing to f<sub>T</sub> = 845 GHz at -55&#x000B0;C

Cited by 41 publications

References 6 publications

Recent progress in compound semiconductor electron devices

Recent progress in compound semiconductor electron devices

Self-consistent 1-D Schrödinger–Poisson solver for III–V heterostructures accounting for conduction band non-parabolicity

Transconductance Degradation in Near-THz InP Double-Heterojunction Bipolar Transistors

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