Self-consistent 1-D Schrödinger–Poisson solver for III–V heterostructures accounting for conduction band non-parabolicity

Wang, Lingquan; Asbeck, P.M.; Taur, Yuan

doi:10.1016/j.sse.2010.06.018

Cited by 19 publications

(4 citation statements)

References 12 publications

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“…We are thus able to take into account the impact of NP on several aspects: (i) decrease of quantized energies compared to parabolic approximation, that lowers the voltage required for subband alignment in structures such as the EHBTFET [3], (ii) increase of the transverse DOS, hence the occupation ratio of the valley, (iii) heavier effective masses [11], that decrease the amount of WF overlap between the electron and hole states (see sample results Fig. 2 for a Ge EHBTFET), (iv) increase in (similar to the point (ii)) the joint density of states available for tunneling that goes as wave-vector k T which fulfills simultaneous conservation of total energy and transverse momentum).…”

Section: Description Of Modelsmentioning

confidence: 99%

Efficient quantum mechanical simulation of band-to-band tunneling

Alper

Palestri

Padilla

et al. 2015

EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

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In this work, we extend an already existing simulator for tunnel FETs to fully take into account nonparabolicity (NP) of the conduction band in all aspects, namely the wavefunction (WF) and density of states (DOS) corrections for both charge and BTBT current calculation. Comparison against more advanced full-quantum simulators based on TB and k · p Hamiltonians is presented as well and indicates very good matching between models for simple tunnel diodes. An initial parameter study of the Electron Hole Bilayer TFET (EHBTFET) indicates the presence of an optimum channel thickness, determined by the interplay between the subband alignment voltage and ON current level.

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Section: Description Of Modelsmentioning

confidence: 99%

Efficient quantum mechanical simulation of band-to-band tunneling

Alper

Palestri

Padilla

et al. 2015

EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

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“…The conduction band minima at the Γ and L points are described within the effective mass approximation including non-parabolic corrections (NP-EMA), a necessary ingredient of electron transport models in III-V semiconductors [26], [27], [28], [29]. Band edges, effective masses and non-parabolicity coefficients for the bulk GaAs material are taken from references in [30] and are reported in Tab.…”

Section: Introductionmentioning

confidence: 99%

Quasi-Ballistic $\Gamma $ - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs

Caruso

Palestri

Lizzit

et al. 2016

IEEE Trans. Electron Devices

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Abstract-We carefully scrutinize the potential of ultra thin body strained (111) GaAs MOSFETs to achieve better performance than other GaAs-based channel FETs at scaled channel length and with relaxed thickness requirements thanks to Lvalleys enhanced Density of States and carrier transport. Calibrated Multi-Subband Monte Carlo simulations including scattering provide the modeling framework necessary for accurate simulations.The results show that L-valley-enhanced transport most likely will not yield the Ion and switching time improvements observed in simple ballistic simulations, even if considering ideal material properties and purely phonon scattering limited transport. In fact, the increased Density of States and inversion charge at the virtual source provided by the L-valleys in the strained material is counterbalanced by an increased phonon scattering rate and reduced carrier velocity.

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“…Indeed, it has been shown to considerably increase the gate capacitance in inversion [5]. It is therefore necessary to take non-parabolicity into account in compact models when evaluating the performance of alternative channel MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity

Hiblot

Mugny

Rafhay

et al. 2015

IEEE Trans. Nanotechnology

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In this work, Poisson-Schrödinger simulations of bulk MOSFETs with an InGaAs channel, including traps and non-parabolicity, are compared against experimental data. These simulations are later used to validate a compact model for the inversion charge in the channel as a function of the gate voltage. Finally, an expression for the long-channel drain current is derived from this inversion charge model, and confirmed with experimental data. This current model, adapted for alternative channel devices, is suitable for the evaluation of III-V MOSFET performance.options will be briefly reviewed to examine which one is the most appropriate for the implementation of III-V bulk MOSFETs in Mastar, which serves as a roadmap prediction tool [12].

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Self-consistent 1-D Schrödinger–Poisson solver for III–V heterostructures accounting for conduction band non-parabolicity

Cited by 19 publications

References 12 publications

Efficient quantum mechanical simulation of band-to-band tunneling

Efficient quantum mechanical simulation of band-to-band tunneling

Quasi-Ballistic $\Gamma $ - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs

Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity

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