A leading edge 22nm 3-D tri-gate transistor technology has been optimized for low power SoC products for the first time. Low standby power and high voltage transistors exploiting the superior short channel control, < 65mV/dec subthreshold slope and <40mV DIBL, of the Tri-Gate architecture have been fabricated concurrently with high speed logic transistors in a single SoC chip to achieve industry leading drive currents at record low leakage levels. NMOS/PMOS Idsat=0.41/0.37mA/um at 30pA/um Ioff, 0.75V, were used to build a low standby power 380Mb SRAM capable of operating at 2.6GHz with 10pA/cell standby leakages. This technology offers mix-and-match flexibility of transistor types, high-density interconnect stacks, and RF/mixed-signal features for leadership in mobile, handheld, wireless and embedded SoC products.
IntroductionAs CMOS technology scales down to 22nm, traditional planar transistor architectures [1-3] have reached a fundamental limit for the required short channel control necessary to continue scaling at the rate dictated by Moore's Law. Recently, novel 3-D Tri-Gate transistors have been proven to be capable of high volume manufacturing for high performance CPU products [4]. This paper reports, for the first time, a leading edge 22nm SoC process technology featuring 3-D Tri-Gate transistors which employs high speed logic transistors, low standby power transistors and highvoltage tolerant transistors simultaneously in a single SoC chip to support a wide range of products, including premium smart phones, tablets, netbooks, embedded systems, wireless communications, and ASIC products.
Pseudomorphic InP∕InGaAs heterojunction bipolar transistors (PHBTs) using a compositionally graded collector (10% indium grading) and graded base (6% indium grading) to reduce the transit time of the device are reported. A 0.4×6μm2 HBT achieves excellent ƒT values of 604GHz (associated ƒMAX=246GHz) at a collector current density of 16.8mA∕μm2, with a dc gain of 65 and a breakdown voltage of BVCEO=1.7V.
This letter reports the direct observation of the radiative recombination in the graded base layer of InGaP/GaAs heterojunction bipolar transistors (HBTs). For a 1 μm×16 μm emitter HBT, we demonstrate the change of the spontaneous light emission intensity (ΔIout) as the base current (Δib) of the HBT is varied from 0 to 5 mA, i.e., an HBT operating as a light-emitting transistor. We also demonstrate output light modulation from the base layer at 1 MHz with the base current modulated at 1 MHz in normal transistor mode operation of the HBT.
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