Prospects for ion bombardment and ion implantation in GaAs and InP device fabrication

Morgan, D. V.; Eisen, F. H.; Ezis, A.

doi:10.1049/ip-i-1.1981.0033

Cited by 9 publications

(15 citation statements)

References 14 publications

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“…After the Si implantation, new openings were formed on the other side of the ridges in a new layer of photoresist, and p-contact regions were similarly formed via Be implantation, with a dose of 1 10 cm . This higher dose was used since Be is known to activate more easily at high doses than Si [15], and also to counterweight the high diffusivity of Be during high-temperature annealing [16]. This high Be diffusivity in fact served to shift the diffusion front (and thus the p-i junction) under the ridge during annealing, which is a design counter-measure to low hole mobility, suggested by our theoretical studies [1].…”

Section: Fabricationmentioning

confidence: 99%

“…Generally, the LCI#2 lasers performed much better than the lasers from LCI#1, which can be attributed in part to the higher vertical optical confinement factor for the former laser structure, and in part to the p-doping of the active region, as will be discussed below. However, both suffered from excessive contact resistance, which for 300-m devices was typically around [15][16][17][18][19][20][21][22][23][24][25] , and must be improved. To avoid effects from excessive resistive heating, most measurements were performed in the pulsed regime, with pulse duration 0.2 s and 0.3% duty cycle.…”

Section: A L-i Characteristicsmentioning

confidence: 99%

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Ion-implanted GaAs-InGaAs lateral current injection laser

Tager

Gaška

Avrutsky

et al. 1999

IEEE J. Select. Topics Quantum Electron.

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Section: Fabricationmentioning

confidence: 99%

Section: A L-i Characteristicsmentioning

confidence: 99%

Ion-implanted GaAs-InGaAs lateral current injection laser

Tager

Gaška

Avrutsky

et al. 1999

IEEE J. Select. Topics Quantum Electron.

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“…The ion irradiation of the III-V materials presents a unique feature compared to that of Si, since it can convert conductive layers to highly resistive ones. [1][2][3] The masking of defined areas of the semiconductor surface with photoresist followed by irradiation with proper ion doses and energies constitutes an efficient and practical technique to isolate closely spaced devices. It is commonly assumed that the trapping of carriers at the irradiation damage or at deep centers associated to specific impurities used for irradiation ͑chemical isolation͒ are the mechanisms that promote electrical isolation.…”

mentioning

confidence: 99%

Electrical isolation in GaAs by light ion irradiation: The role of antisite defects

Souza

Данилов

Boudinov

1996

Applied Physics Letters

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The evolution of the sheet resistance (Rs) in n-type GaAs layers during ion irradiation was studied using light mass projectiles like proton, deuterium, and helium ions at various energies. For all the cases, at the beginning of the irradiation, Rs increases with the accumulation of the dose. After reaching ≊109 Ω/⧠, Rs saturates, forming a plateau. This plateau is succeeded by a decreasing of Rs with the increase of the dose, denoting that conduction via damage-related mechanisms is taking place. The threshold dose to convert the conductive layer to a highly resistive one at room temperature or at 100 °C is found to scale with the inverse of the estimated number of displaced lattice atoms along the depth of the doped layer. Antisite defects formed by the replacement collisions are invoked to play the major role in isolation formation in GaAs by virtue of their lower sensitivity to dynamic annealing compared to other point defects.

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“…(4). For example, such junctions are required for the gate region of JFET's in high speed GaAs integrated circuits.…”

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confidence: 99%

Beryllium Ion‐Implanted Junctions in GaAs with Submicron Lateral Diffusion

Campbell

Baliga

1985

J. Electrochem. Soc.

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Beryllium ion implants in GaAs annealed at 900~ for 30 rain with a Si3N4 encapsulant have been shown to form p-n junctions with lateral diffusion between 0.5 and 1.0 ~m, junction depth of 0.7 ~m, and implant activation rate of -100%. SiO2 and phosphosilicate glass encapsulants yield similar values of lateral diffusion, junction depth, and activation rate, but are shown to induce near-surface degradation effects manifested by a reduced carrier concentration within 1.0 ~m of the surface in unimplanted annealed material and to produce anomalously high breakdown voltages and high leakage currents in Beimplanted junctions.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.15.241.167 Downloaded on 2015-03-09 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.15.241.167 Downloaded on 2015-03-09 to IP

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Prospects for ion bombardment and ion implantation in GaAs and InP device fabrication

Cited by 9 publications

References 14 publications

Ion-implanted GaAs-InGaAs lateral current injection laser

Ion-implanted GaAs-InGaAs lateral current injection laser

Electrical isolation in GaAs by light ion irradiation: The role of antisite defects

Beryllium Ion‐Implanted Junctions in GaAs with Submicron Lateral Diffusion

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