Ion-implanted GaAs-InGaAs lateral current injection laser

Tager, A.A.; Gaška, R.; Avrutsky, Ivan; Fay, Martin; Chik, H.; SpringThorpe, A. J.; Eicher, S.; Xu, Jimmy; Shur, M. S.

doi:10.1109/2944.788433

Cited by 15 publications

(6 citation statements)

References 24 publications

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“…Previous studies of edge-emitting lateral current injection lasers found that the performance was worse than in comparable vertical injection lasers due to a nonuniform carrier distribution in the active region. 12,13 This is because the lasers were fabricated with intrinsic regions wider than the ambipolar diffusion length, which in most III-V materials is approximately 1 m. Improvements in fabrication techniques should allow the intrinsic region width to be reduced significantly, leading to better performance.…”

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confidence: 99%

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Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction

Ellis¹,

Sarmiento

Mayer

et al. 2010

Applied Physics Letters

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A technique to electrically pump photonic crystal nanocavities using a lateral p-in junction is described. Ion implantation doping is used to form the junction, which under forward bias pumps a gallium arsenide photonic crystal nanocavity with indium arsenide quantum dots. Efficient cavity-coupled electroluminescence is demonstrated and the electrical characteristics of the diode are presented. The fabrication improvements necessary for making an electrically pumped nanocavity laser using a lateral junction are discussed.

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confidence: 99%

“…Ion implantation induced damage introduces nonradiative recombination centers, and the PL intensity was observed to decrease significantly in the implanted regions, similar to what has been observed in other experiments. 12,13 The unimplanted regions are left undamaged, so the emission intensity there is unaffected.…”

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confidence: 99%

Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction

Ellis¹,

Sarmiento

Mayer

et al. 2010

Applied Physics Letters

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“…The InP bulk wafer with AlGaInAs MQWs and InGaAs SCH layer is first patterned and etched approximately 300 nm to form alignment marking pattern on the top surface of the III/V wafer. The Si, P and Be implantation is done subsequently to form the N+ region and P+ region, which has been widely adapted for the LCI laser device fabrication as described Ref [12]. The next step is to join the III/V and silicon material together by direct wafer bonding, which is a wellestablished technique to achieve atomic level bonding with minimized interfacial dislocations.…”

Section: Fabrication Discussionmentioning

confidence: 99%

A novel type of ultra-compact lateral-current-injection III/V photonic device integrated on SOI for electronic-photonic chip application

Wang

2013

SPIE Proceedings

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An on-chip light source plays a determinant role in the realization of integrated photonic chips for optical interconnects technology. Several integration schemes of III/V laser on SOI platform for on-chip laser application have been proposed and demonstrated. However, most of those integration approaches do not provide effective solutions for the following two problems: effective light confinement/amplification in the III/V active region; and efficient light transfer/coupling between silicon and III/V waveguide. In this paper, a novel approach to integrate an ultra-compact Lateral-Current-Injection (LCI) laser on silicon-on-insulator (SOI) platform by direct wafer bonding technique is proposed and designed. The proposed LCI device has an ultra-thin thickness of 270 nm which is ~10 times thinner than the vertical current injection laser bonded on silicon. It has a confinement factor in the active region larger than 40% for 1 µm wide III/V active waveguide, which is the highest among all the other integration schemes proposed so far. An optical vertical interconnect access to transfer light efficiently between III/V and silicon layer is designed. The design of the shortest "Optical Via" of 4 µm which gives ~100% coupling efficiency is presented.

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“…However, this technique is very complicated and requires additional electron-beam lithography steps [29]. Alternatively, ion implantation has been explored as a method to form LCI edge-emitting GaAs lasers and more recently electroluminescent devices in InGaAsP PC membranes [30], [31]. We build off of these works and refine a technique to form a lateral junction in GaAs with high precision and reproducibility.…”

Section: Fabrication and Designmentioning

confidence: 99%

Electrically driven photonic crystal nanocavity devices

Shambat

Ellis

Petykiewicz

et al. 2012

Advanced Photonics Congress

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Abstract-Interest in photonic crystal nanocavities is fueled by advances in device performance, particularly in the development of low-threshold laser sources. Effective electrical control of highperformance photonic crystal lasers has thus far remained elusive due to the complexities associated with current injection into cavities. A fabrication procedure for electrically pumping photonic crystal membrane devices using a lateral p-i-n junction has been developed and is described in this study. We have demonstrated electrically pumped lasing in our junctions with a threshold of 181 nA at 50 K-the lowest threshold ever demonstrated in an electrically pumped laser. At room temperature, we find that our devices behave as single-mode light-emitting diodes (LEDs), which when directly modulated, have an ultrafast electrical response up to 10 GHz corresponding to less than 1 fJ/bit energy operation-the lowest for any optical transmitter. In addition, we have demonstrated electrical pumping of photonic crystal nanobeam LEDs, and have built fiber taper coupled electro-optic modulators. Fibercoupled photodetectors based on two-photon absorption are also demonstrated as well as multiply integrated components that can be independently electrically controlled. The presented electrical injection platform is a major step forward in providing practical low power and integrable devices for on-chip photonics.

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Ion-implanted GaAs-InGaAs lateral current injection laser

Cited by 15 publications

References 24 publications

Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction

Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction

A novel type of ultra-compact lateral-current-injection III/V photonic device integrated on SOI for electronic-photonic chip application

Electrically driven photonic crystal nanocavity devices

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