Properties of Tellurium Implanted Gallium Arsenide

Eisen, F. H.; Harris, James S.; Welch, B.M.; Pashley, R.; Sigurd, D.; Mayer, J. W.

doi:10.1007/978-1-4684-2064-7_55

Cited by 8 publications

(3 citation statements)

References 12 publications

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“…It is presumed that the fall off in conductivity that occurs above 825~ is surface related. The activity still attainable at higher temperatures for SijN4 encapsulated Te implants (7) suggests that certain dielectrics may not be as restrictive as SiO2 in this respect. More clarification is required, however.…”

Section: Resultsmentioning

confidence: 99%

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Comparison of Group IV and VI Doping by Implantation in GaAs

Davies¹,

Kennedy²,

Ludington³

1975

J. Electrochem. Soc.

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Factor important in attaining higher n‐type conductivity on implanting normalGaAs have been investigated. These are reflected in a comparison of Group IV and VI dopants where the difference in behavior can be ascribed to the different sublattice occupation. The importance of Ga outdiffusion with SiO2 encapsulated layers is seen on incorporating Ga within the oxide prior to initiating any heat‐treatment. For sulfur, the electrical activity is doubled by the presence of the oxide gallium. Such an oxide is detrimental for implanted Si+layers and indicates that some Ga outdiffusion is desirable. Presumably the same applies and inadvertently occurs with the traditionally simpler p‐type implants. The annealing of S+ and Se+ implants with a dose‐dependent, optimum annealing temperature differs significantly from Si+ which requires higher annealing for comparable doping. The advantage gained by implanting Group VI dopants at elevated temperatures is not as pronounced with Si and in this respect Si resembles the p‐type dopant Zn which does not exhibit any strong dependence on implantation temperature.

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Section: Resultsmentioning

confidence: 99%

“…Better Te doping was obtained by Harris et al (5) when implanting at 150~ rather than at room temperature. For S, an increase in utilization as dopants occurs ,~150~ (6), coinciding with the temperature required to avoid lattice disorder (7), and no further improvement occurs at higher temperatures (up to 500~…”

mentioning

confidence: 99%

Comparison of Group IV and VI Doping by Implantation in GaAs

Davies¹,

Kennedy²,

Ludington³

1975

J. Electrochem. Soc.

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“…Kellner (3) has shown that the electrical activation of sulfur depends critically on the substrate material. Lower mobility may indicate an excessive carrier concentration which might come from the pile-up of the implanted sulfur at the surface during annealing (12). When processing is identical, the critical factor controlling the sulfur redistribution should be related to the presence of residual impurities in the GaAs substrates.…”

Section: Resultsmentioning

confidence: 99%

Evaluation of S‐ and Se‐Implanted GaAs by Contactless Mobility Measurement

Molnár

Kennedy

1978

J. Electrochem. Soc.

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Implantation of S and Se into normalGaAs has been studied with a novel contactless mobility measurement. The method, in which the mobility is obtained from a microwave measurement of the conducting layer's magnetoconductivity, is described in detail. Comparisons with Hall mobility are provided. Evaluation of different normalGaAs substrate material is described. A wide range of implantation and annealing conditions for S and Se in normalGaAs have been explored. S implantation of 5×1012/cm2 with a 850°C, 20 min anneal is found to produce FET quality layers.

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Ion Implantation In III–V Compounds

Eisen

1975

Ion Implantation in Semiconductors

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Properties of Tellurium Implanted Gallium Arsenide

Cited by 8 publications

References 12 publications

Comparison of Group IV and VI Doping by Implantation in GaAs

Comparison of Group IV and VI Doping by Implantation in GaAs

Evaluation of S‐ and Se‐Implanted GaAs by Contactless Mobility Measurement

Ion Implantation In III–V Compounds

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