Evaluation of S‐ and Se‐Implanted GaAs by Contactless Mobility Measurement

Abstract

Implantation of S and Se into normalGaAs has been studied with a novel contactless mobility measurement. The method, in which the mobility is obtained from a microwave measurement of the conducting layer's magnetoconductivity, is described in detail. Comparisons with Hall mobility are provided. Evaluation of different normalGaAs substrate material is described. A wide range of implantation and annealing conditions for S and Se in normalGaAs have been explored. S implantation of 5×1012/cm2 with a 850°C, 20 min anneal is found to produce FET quality layers.

Измерение Подвижности Носителей Заряда В Арсениде Галлия С Помощью Ближнеполевого Сверхвысокочастотного Микроскопа Методом Сверхвысокочастотного Магнитосопротивления

“…Для расчета искомой СВЧ подвижности носителей заряда в образце использовалось соотношение, применяемое в методах определения подвижности с использованием эффекта СВЧ магнитосопротивления [1][2][3][4]:…”

“…Измерение подвижности носителей заряда в полупроводниковых материалах и в структурах полупроводниковых приборов представляет интерес, так как знание этого параметра позволяет прогнозировать основные характеристики приборов на основе этих материалов [1]. Известные способы определения подвижности носителей заряда с использованием эффекта сверхвысокочастотного (СВЧ) магнитосопротивления [2][3][4][5][6] позволяли получать только усредненную по объему полупроводника подвижность носителей заряда. Их использование было также связано с ограничениями, накладываемыми на толщину исследуемого образца.…”

The microwave Hall effect measured using a waveguide tee

“…Microwave resistivity techniques in other studies include measuring the attenuation and reflection of material placed in waveguides and transmission lines and the change in the quality factor in resonant cavities [12]. We discuss a method for measuring resistivity that involves measuring the amount of reflected power from a sample in a waveguide with a variable shorting stub [13,14,15,16]. These studies also fit the variation of the resistivity with a magnetic field to a quadratic Drude model and can derive the mobility if there is only one carrier [13].…”

“…We discuss a method for measuring resistivity that involves measuring the amount of reflected power from a sample in a waveguide with a variable shorting stub [13,14,15,16]. These studies also fit the variation of the resistivity with a magnetic field to a quadratic Drude model and can derive the mobility if there is only one carrier [13]. Since both the mobility and the resistivity can be obtained from microwave measurements, the carrier concentration can be obtained as well.…”

“…The charge q has the magnitude of the electron's charge. To obtain the conductivity, we measure the sheet resistance of a wafer using a reflection method [13,14,15,16]. Our apparatus is shown in fig.…”