Properties of lnAsxP1-x layer formed by P-As exchange reaction on (001)lnP surface exposed to As4 beam

Two-step kinetics of As/P exchange reaction

“…[1][2][3] The first step involves adsorption of As followed by its incorporation into the surface layer by an exchange of As with P, which may also be called ''surface exchange.'' The second is a bulk exchange step in which P in a given layer is exchanged with As in the adjoining two layers.…”

“…This trend is in agreement with that reported in the literature. 2,3 The arsenic pressure, on the other hand, has the opposite effect on the depth. An increase in the pressure results in an increase in ␣, which in turn has the effect of decreasing the penetration depth as revealed in Fig.…”

“…Of these, material systems involving arsenic ͑As͒ and phosphorus ͑P͒ atoms such as InGaAs/InP and ͑Al͒GaInP/GaAs are technologically important for optoelectronic applications. [1][2][3][4][5][6][7][8][9] The growth of these materials, however, is hampered by two major problems. One is the exchange of As with P, As/P exchange; 1-7 the other is arsenic carryover.…”

“…7 However, the thickness increases with increasing As exposure time, with the thickness being as deep as 5.5 ML for long exposure. 3 But, according to scanning tunneling microscopy ͑STM͒ images, this may result from the roughness effects caused by many small islands on the surface. This surface exchange reaction deteriorates the metallurgical abruptness of the interface by creating a short range roughness that is smaller than the exciton diameter.…”

Relaxed InAsP layers grown on step graded InAsP buffers by solid source MBE

“…Growth studies of strained, mixed-anion material systems, such as InAs x P 1-x /InP [1], GaAs x P 1-x /GaP [2], and GaAs x P 1-x /GaAs [3] indicate that the strain at the surface of the growing thin film modifies the growth dynamics in order to reduce the strain in the film. For strained InAs x P 1-x , this is achieved by a reduced incorporation coefficient of As into the alloy and also an As-P exchange reaction that produces rough interfaces [4,5]. This paper presents a systematic study of structural and electronic properties of relaxed Si-doped InAs x P 1-x alloys grown on step graded InAs x P 1-x buffers by solid source molecular beam epitaxy (SSMBE) and the dependence of the carrier concentration, mobility, and Si donor activation energy on As composition in InAs x P 1-x alloys.…”