Two-step kinetics of As/P exchange reaction

Abstract

A simple two-step mechanism is used to derive the kinetics of the As/P exchange reaction which takes place on an epitaxially grown InP surface exposed to As flux. The first step involves surface exchange of arsenic with phosphorus, which is then followed by the second step, bulk exchange of arsenic ͑arsenic incorporation͒. Two possible choices are investigated for bulk exchange: the same exchange rate constant in the bulk and the same ratio of exchange rate constants in the bulk. Transient and steady-state profiles of As composition and the maximum depth of the As/P exchange reaction are derived analytically.

Critical thickness for InAs quantum dot formation on (311)B InP substrates

“…Because low intermixing has been reported for InAs/InP nanostructure [13], the large increase of the amount of InAs within QD ensemble is mainly related to As/P exchange on surface. Assuming low As/P exchange at 400 1C [14], a WL thickness of 1.5 ML is evaluated from the difference between the amount of InAs deposited and the amount of InAs within QDs. Note that this corresponds roughly with the critical thickness, measured at 400 1C by RHEED.…”

Characterization of Electrical Contacts on Polycrystalline 3C-SiC Thin Films

“…So TLM allows to extract bulk resistivity (ρ) and to calculate specific contact resistivity (ρ c ) [4].…”

“…The specific contact resistivity, ρ c , is defined by the local current density j and the local voltage drop V as in [4] and can be obtained multiplying R C per the contact pad area.…”

“…For electrical long contacts, the voltage distribution under the contact pad falls off exponentially with a characteristic decay length L T , called the transfer length and obtained from TLM analysis [4].…”

“…5. The linear fitting equation [4] permit us to determine ρ, R C and L T from the slope, the yintercept and the x-intercept respectively as functions of temperature, the values of which are resumed in tab.1.…”