Abstract:We report on the investigation of electrical properties of polycrystalline 3C-SiC thin
films deposited on oxidized Si by low pressure chemical vapor deposition (LPCVD) to obtain bi-layer structures [Si(100)/SiO2/poly 3C-SiC] for pressure sensors and micro-electromechanical system (MEMS) applications.
Polycrystalline 3C-SiC films have been preliminary characterized in their compositional, structural, morphological and electrical properties. Moreover, metal contact definition has been carefully optimized by tran… Show more
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