Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric

Abstract

InAs is very attractive as a channel material for high-speed metal-oxide-semiconductor ͑MOS͒ field-effect transistors due to its very high electron mobility and saturation velocity. We investigated the processing conditions and the interface properties of an InAs metal-oxide-semiconductor structure with Al 2 O 3 dielectric deposited by atomic-layer deposition. The MOS capacitor I-V and C-V characteristics were studied and discussed. Simple field-effect transistors fabricated on an InAs bulk material without source/drain implantation were measured and analyzed.

1/f and RTS noise in InGaAs nanowire MOSFETs

“…In contrast to a previous study on highly scaled InGaAs GAA MOSFETs [3], our measurements show that number fluctuations (rather than mobility fluctuations) are the dominant LF noise source, as the normalized drain current noise In equation (1), ox is the oxide capacitance per unit area and λ is the tunneling attenuation length in the gate oxide, given by = ( 4 ℎ √2 * Ф ) −1 [7]. Assuming an effective electron mass of * = 0.23 [8] in Al2O3 and an oxide barrier height of Ф = 2.4 eV [9], the trap density is as low as ~ 9·10 18 cm -3 eV -1 . This correlates with the low minimum subthreshold slope of 77 mV/decade in these devices.…”

III–V compound semiconductor transistors—from planar to nanowire structures

“…This was explained by a "self-cleaning effect" in which the native surface oxides are largely eliminated during the early stages of the ALD process. 42 -45 Further investigations have been performed to use dielectrics prepared by ALD on various other III-V materials such as InGaAs, 46 , 47 InAs, 48 and InP. 49 Today, the focus is on investigating the possibility of using ALD-deposited high-κ dielectric layers such as Al 2 O 3 and HfO 2 and a bilayer of both in InGaAs-based MOSFETs.…”

Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors

“…16 Here, m* is the effective electron mass and U B is oxide barrier height. Assuming m* ¼ 0.23Ám 0 (m 0 being the electron rest mass) and U B ¼ 2.3 eV, 17 k ¼ 0.15 nm, and this value is used for calculations of N t . The oxide tunneling distance is given by z ¼ k lnð1=2pf s 0 Þ À1 [nm], 5 where it can be assumed that the time constant s 0 ¼ 10 À10 s. 5 Calculation of the probed oxide depth for f ¼ 10-1000 Hz yields z ¼ 2.0 À 2.7 nm.…”