ChemInform Abstract (from a CO2/H2/He feed via a formate species; the hydrogenation/hydrogenolysis of this species is the rate-determining step).

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InAs is very attractive as a channel material for high-speed metal-oxide-semiconductor ͑MOS͒ field-effect transistors due to its very high electron mobility and saturation velocity. We investigated the processing conditions and the interface properties of an InAs metal-oxide-semiconductor structure with Al 2 O 3 dielectric deposited by atomic-layer deposition. The MOS capacitor I-V and C-V characteristics were studied and discussed. Simple field-effect transistors fabricated on an InAs bulk material without source/drain implantation were measured and analyzed.

Polymeric precursors to a wide range of non-oxide ceramics have been synthesized by reacting metal alkoxides with a range of polyhydric and monohydric alcohols (transesterification). The choice of alcohols controls the form of the polymer and the stoichiometry of the coke produced by charring the polymer in an inert atmosphere. The metal oxide and carbon in the cokes are shown to be very intimately mixed, so that subsequent carbothermal reduction proceeds at reduced temperatures, leading to products of high purity and fine particle size. By incorporating more than one metal in the precursor it is possible to produce ceramic alloys at significantly lower temperatures than conventional means allow.

Carbothermal Synthesis of Binary (MX) and Ternary (M1,M2X) Carbides, Nitrides, and Borides from Polymeric Precursors.-Polymeric precursors which have been synthesized by reaction of metal alkoxides with polyhydric and monohydric alcohols are coked by heating in an inert atmosphere to undergo carbothermal reduction at temperatures in the range 1000-1650 • C. The resulting ceramic phases like AlN, TiB2 etc. are characterized by powder X-ray diffraction measurements. The results show that the redidual oxygen and carbon could be kept to a minimum (0.2-0.5%). -(STANLEY, D. R.; BIRCHALL, J. D.; HYLAND, J. N. K.; THOMAS, L.; HODGETTS, K.; J. Mater. Chem. 2 (1992) 2, 149-156; ICI Adv. Mat., Runcorn, Cheshire WA7 4QE, UK; EN)