Properties of hydrogenated amorphous silicon thin film transistors fabricated at 150°C

Choi, Jae Beom; Yun, D. C.; Park, Yong In; Kim, Jeong Hyun

doi:10.1016/s0022-3093(99)00943-6

Cited by 25 publications

(7 citation statements)

References 9 publications

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“…Considering that the magnitude of SS represents the quality about how soon the OFETs turn from off state to on state, a lower value is desirable for fast switching. The SS is determined from the following equation in the subthreshold regime at the transfer characteristic curves:

S S = \frac{\partial V_{italicG}}{\partial (log I_{italicD})}

…”

Section: Resultsmentioning

confidence: 99%

Engineered interface using a hydroxyl group‐free polymeric buffer layer onto a TiO₂ nanocomposite film for improving the electrical properties in a low‐voltage operated organic transistor

Bae

Choi

2011

Surface & Interface Analysis

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We demonstrate the effect of engineered interfaces by introducing different classes of polymeric buffer layers onto a titanium oxide (TiO 2 ) nanocomposite film on the density of interfacial trap sites and corresponding mobility in low-voltage-operated organic field-effect transistors. The organic field-effect transistors were fabricated using pentacene as an organic semiconductor layer and a high dielectric TiO 2 nanocomposite film for low-voltage operation stacked with two different kinds of thin polymers, one of which is hydroxyl group-existing polyvinyl phenol and the other is hydroxyl group-free polyvinyl cinnamate. By using the hydroxyl group-free buffer layer, the interfacial trap density is found to be much decreased than that for the hydroxyl groupexisting buffer layer. In addition, the mobility for the polyvinyl cinnamate used case, shows significantly increased value by at least one of magnitude compared to the case of no buffer layer. It is found that a hydroxyl group-free polymeric layer produces a more effective surface, which leads to high electrical properties and less electrochemical traps at the interface in the organic devices.

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S S = \frac{\partial V_{italicG}}{\partial (log I_{italicD})}

…”

Section: Resultsmentioning

confidence: 99%

Engineered interface using a hydroxyl group‐free polymeric buffer layer onto a TiO₂ nanocomposite film for improving the electrical properties in a low‐voltage operated organic transistor

Bae

Choi

2011

Surface & Interface Analysis

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“…The applied gate-source voltage and initial threshold voltages are expressed as V initial int and V T,2 , V T,0 , respectively. After the pixel circuit has been operated under voltage-bias stress, both T 2 and T 0 are degrading due to the disordered nature of the amorphous material [1], [17]. Consequently, the degradation causes V T on both T 2 and T 0 .…”

Section: The Charge-transfer Self-compensating Mechanismmentioning

confidence: 99%

A 6-TFT Charge-Transfer Self-Compensating Pixel Circuit for Flexible Displays

Lee

Asad

et al. 2019

IEEE J. Electron Devices Soc.

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In this paper, a self-compensating 6 thin-film transistor (TFT) pixel circuit with special layout considerations has been proposed to mitigate the impact of the electrical instability of hydrogenated amorphous silicon TFTs as well as applied mechanical strain. The proposed pixel circuit has been fabricated onto flexible polyethylene naphthalate (PEN) substrate and the measurement results demonstrated less than ±3% variation of its output current after an accelerated 24-h stress test under flat, tensile strain, and compressive strain conditions. In addition, the proposed pixel circuit only required a pair of signals to operate, which reduced the complexity on external IC drivers.

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“…Thus, many efforts have been made to overcome the temperature and power limitation. However, it is generally known that low temperature a-Si:H film does not show acceptable device stability [9][10][11]. Therefore, we have developed low temperate a-Si:H TFT on stainless steel substrate having improved device stability.…”

Section: Introductionmentioning

confidence: 99%

Performance and stability of low temperature hydrogenated amorphous silicon thin film transistors fabricated on stainless steel substrate

Kim¹,

Kim²,

Lee³

et al. 2010

Phys. Status Solidi (c)

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The key development issues in the flexible displays are TFT backplane technology, which requires competitive device performance and low temperature process compatible with flexible substrate. Here, we have fabricated low temperature hydrogenated amorphous silicon thin film transistor on a stainless steel substrate coated with organic barrier layer. Then, we have studied initial device performance by varying plasma gas and pressure conditions at a low power and a low temperature during amorphous silicon and silicon nitride deposition steps. Also, we discuss the stability characteristics of this low temperature processed thin film transistor, which reveals enough possibility for use in flexible display applications. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Properties of hydrogenated amorphous silicon thin film transistors fabricated at 150°C

Cited by 25 publications

References 9 publications

Engineered interface using a hydroxyl group‐free polymeric buffer layer onto a TiO₂ nanocomposite film for improving the electrical properties in a low‐voltage operated organic transistor

Engineered interface using a hydroxyl group‐free polymeric buffer layer onto a TiO₂ nanocomposite film for improving the electrical properties in a low‐voltage operated organic transistor

A 6-TFT Charge-Transfer Self-Compensating Pixel Circuit for Flexible Displays

Performance and stability of low temperature hydrogenated amorphous silicon thin film transistors fabricated on stainless steel substrate

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Properties of hydrogenated amorphous silicon thin film transistors fabricated at 150°C

Cited by 25 publications

References 9 publications

Engineered interface using a hydroxyl group‐free polymeric buffer layer onto a TiO2 nanocomposite film for improving the electrical properties in a low‐voltage operated organic transistor

Engineered interface using a hydroxyl group‐free polymeric buffer layer onto a TiO2 nanocomposite film for improving the electrical properties in a low‐voltage operated organic transistor

A 6-TFT Charge-Transfer Self-Compensating Pixel Circuit for Flexible Displays

Performance and stability of low temperature hydrogenated amorphous silicon thin film transistors fabricated on stainless steel substrate

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Engineered interface using a hydroxyl group‐free polymeric buffer layer onto a TiO₂ nanocomposite film for improving the electrical properties in a low‐voltage operated organic transistor

Engineered interface using a hydroxyl group‐free polymeric buffer layer onto a TiO₂ nanocomposite film for improving the electrical properties in a low‐voltage operated organic transistor