Performance and stability of low temperature hydrogenated amorphous silicon thin film transistors fabricated on stainless steel substrate

Abstract

The key development issues in the flexible displays are TFT backplane technology, which requires competitive device performance and low temperature process compatible with flexible substrate. Here, we have fabricated low temperature hydrogenated amorphous silicon thin film transistor on a stainless steel substrate coated with organic barrier layer. Then, we have studied initial device performance by varying plasma gas and pressure conditions at a low power and a low temperature during amorphous silicon and silicon nitride deposition steps. Also, we discuss the stability characteristics of this low temperature processed thin film transistor, which reveals enough possibility for use in flexible display applications. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

The Effect of Helium Dilution on Optical and Photoelectric Properties of a-Si: H Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Technique

“…In PECVD technique, it was found that several deposition parameters, such as gas flow rate, excitation power, pressure, substrate temperature and dilution of the source gas (silane) with other gases (argon, hydrogen, or helium) influence the structure and properties of the growth of a-Si:H thin film [2,3]. Silicon thin films deposited at low temperatures by PECVD technique have been shown to exhibit good quality and stability for solar cell and TFT applications [6][7][8][9][10]. For solar cell applications, thickness-dependent morphology of protocrystalline Si films grown at the borderline between a-Si: H and nc-Si: H phases was revealed by absolute constant photocurrent method (CPM) [8].…”