Properties of AlN Layers Grown on SiC Substrates in Wide Temperature Range by HVPE

Ledyaev, Oleg; Cherenkov, A. E.; Николаев, А. Е.; Никитина, И.П.; Kuznetsov, N. A.; Dunaevski, M.; Titkov, A. N.; Dmitriev, V.

doi:10.1002/pssc.200390091

Cited by 18 publications

(15 citation statements)

References 8 publications

(4 reference statements)

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“…This result indicates that higher growth temperatures are essential to grow a high-quality AlN layer. The FWHM of AlN layer grown at 1100 1C is still large compared to that of AlN grown on a SiC substrate [12,13]. This difference is thought to be due to direct growth of AlN on the sapphire substrate.…”

Section: Dependence Of Aln Growth On the Growth Temperaturementioning

confidence: 83%

“…Exploiting this fact, a research group at TDI, Inc. and the authors have independently succeeded in HVPE of AlN using a conventional hot-wall quartz reactor [11][12][13][14][15]. However, little has been clarified about the influences of growth temperature and growth rate on the crystalline quality of AlN layers.…”

Section: Introductionmentioning

confidence: 99%

“…Since the size and shape of the grown layer depends on the substrate used, HVPE of AlN is also worth investigating. However, investigations concerning HVPE of AlN have been limited [11][12][13][14][15]. This is primarily due to the fact that the molten Al or hot AlCl gas generated by the reaction between Al metal and HCl gas is very reactive and easily reduces the quartz (SiO 2 ) reactor.…”

Section: Introductionmentioning

confidence: 99%

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Growth of thick AlN layers by hydride vapor-phase epitaxy

Kumagai

Yamane

Koukitu

2005

Journal of Crystal Growth

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Section: Dependence Of Aln Growth On the Growth Temperaturementioning

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Growth of thick AlN layers by hydride vapor-phase epitaxy

Kumagai

Yamane

Koukitu

2005

Journal of Crystal Growth

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“…Although the growth of bulk AlN has been studied by some groups [1][2][3][4][5][6][7][8][9][10], relatively little is known about the growth of bulk AlGaN.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic analysis of AlGaN HVPE growth

Koukitu¹,

Kikuchi²,

Kangawa³

et al. 2005

Journal of Crystal Growth

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“…Recent studies reported that high-quality AlN can be grown on the SiC substrates. 1,[5][6][7][8][9][10][11][12] However, no detailed report is available with regard to the first-stage growth manipulation and SiC substrate polarity to the epitaxial AlN films by using molecular beam epitaxy (MBE). In this method, supplying growth species can be controlled at the initial growth stage.…”

Section: Introductionmentioning

confidence: 99%

Effect of First-Stage Growth Manipulation and Polarity of SiC Substrates on AlN Epilayers Grown Using Plasma-Assisted Molecular Beam Epitaxy

Le¹,

Kim²,

Hong³

2014

Korean. J. Mater. Res.

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Aluminum nitride(AlN) films were grown on the C-face and on the Si-face of (0001) silicon carbide(SiC) substrates using plasma-assisted molecular-beam epitaxy(PA-MBE). This study was focused on first-stage growth manipulation prior to the start of AlN growth. Al pre-exposure, N-plasma pre-exposure, and simultaneous exposure(Al and N-plasma) procedures were used in the investigation. In addition, substrate polarity and, first-stage growth manipulation strongly affected the growth and properties of the AlN films. Al pre-exposure on the C-face and on the Si-face of SiC substrates prior to initiation of the AlN growth resulted in the formation of hexagonal hillocks on the surface. However, crack formation was observed on the Cface of SiC substrates without Al pre-exposure. X-ray rocking-curve measurements revealed that the AlN epilayers grown on the Si-face of the SiC showed relatively lower tilt and twist mosaic than did the epilayers grown on the C-face of the SiC. The results from the investigations reported in this paper indicate that the growth conditions on the Si-face of the SiC without Al pre-exposure was highly preferred to obtain the overall high-quality AlN epilayers formed using PA-MBE.

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Properties of AlN Layers Grown on SiC Substrates in Wide Temperature Range by HVPE

Cited by 18 publications

References 8 publications

Growth of thick AlN layers by hydride vapor-phase epitaxy

Growth of thick AlN layers by hydride vapor-phase epitaxy

Thermodynamic analysis of AlGaN HVPE growth

Effect of First-Stage Growth Manipulation and Polarity of SiC Substrates on AlN Epilayers Grown Using Plasma-Assisted Molecular Beam Epitaxy

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