Growth of thick AlN layers by hydride vapor-phase epitaxy

Kumagai, Yoshinao; Yamane, T.; Koukitu, Akinori

doi:10.1016/j.jcrysgro.2005.03.011

Cited by 84 publications

(68 citation statements)

References 16 publications

(23 reference statements)

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“…In the past, HVPE of AlN has seldom been studied because the molten Al or hot AlCl gas generated at the source zone reacts violently with the quartz (SiO 2 ) reactor [7]. However, the present authors recently reported that HVPE of AlN using AlCl 3 , which does not react with quartz, is possible by preferential generation of AlCl 3 at the source zone [7,8]. Exploiting this fact, other research groups have also investigated HVPE of AlN [9,10].…”

Section: Introductionmentioning

confidence: 87%

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Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Kumagai¹,

Takemoto²,

Kikuchi³

et al. 2006

Physica Status Solidi (b)

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A thermodynamic analysis on hydride vapor phase epitaxy (HVPE) of AlN using AlCl 3 and NH 3 was performed. Regardless of the carrier gas used, partial pressures of Al-containing gaseous species [AlCl 3 , AlCl 2 , AlCl and (AlCl 3 ) 2 ] in equilibrium with AlN are significantly low in the temperature range of 500 -1500 °C when the input V/III ratio is above 1. This means that the driving force for AlN growth (∆P Al ) becomes almost equal to the input partial pressure of AlCl 3 , which is quite different from HVPE of GaN. The good agreement between the calculated and experimental growth rates shows that HVPE of AlN is thermodynamically controlled.

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Section: Introductionmentioning

confidence: 87%

“…4, calculated growth rate as a function of 3 0 AlCl P is fitted to experimental data. The experimental data are from our previous study [8]. In the calculation, the value of K g was found to be 5.58 × 10 4 µm/(h atm).…”

Section: Alclmentioning

confidence: 99%

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Kumagai¹,

Takemoto²,

Kikuchi³

et al. 2006

Physica Status Solidi (b)

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“…The temperature of the growth zone was detected by a Pt10Rh-Pt (S) thermocouple and the temperatures of the other two zones were measured by NiCr-Ni (K) thermocouples. All the hardware in the furnace is made of high-purity alumina to circumvent the chloride corrosion as well as the O and Si contamination, which could happen in a conventional quartz reactor [14,15,23]. Furthermore, the alumina hardware allows hot-wall growth at high temperature up to 1600 8C easily.…”

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confidence: 99%

Structure, optical spectra and biaxial stress of (0002) AlN epilayers grown on c‐sapphire by high‐temperature chemical vapor deposition

Zhang

Liu

Liang

2014

Physica Status Solidi (a)

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(0002) AlN epilayers were grown on c‐sapphire at temperatures of 1100, 1200, 1300, 1400, and 1500 °C, respectively, by a homebuilt high‐temperature chemical vapor deposition system. The structure, optical properties and biaxial stress of these epilayers were characterized by scanning electronic microscope, XRD, Raman scattering, and UV absorption. The results revealed that smooth layers were obtained below 1400 °C, while stripe‐shaped and hexagon‐aligned islands grew on the surface of the layer at 1500 °C due to inhomogeneous nucleation in decreased supersaturation. Moreover, the narrowing FWHM of (0002) reflection and phonon modes indicated that the crystal quality improved with increasing temperature. The optical bandgap enlarged with the increasing growth temperature, owing to decreasing dislocations and domain boundaries as well as increasing compressive stress, except that the optical bandgap shrank at 1500 °C because light scattering at the rough surface of the epilayer flattened its optical absorption edge. Furthermore, the results of XRD and Raman studies demonstrated that the biaxial stress in the epilayers turned from tensile stress to compressive stress linearly below 1.8 GPa, resulting in a biaxial stress coefficient of −1.9 cm−1 GPa−1. Therefore, the improving structure together with the increasing biaxial compressive stress of the epilayer enlarged its optical bandgap with a large coefficient of −426 meV GPa−1.

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“…[3][4][5]). This technology can provide the growth of 3 inch diameter thick single-crystal AlN epilayers on sapphire or silicon-carbide substrates.…”

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confidence: 99%

“…Similar literature data for AlN HVPE are rather limited and contradictory (see, for example, Refs. [4,13]). So, the transition temperature between the transportlimited and kinetically limited growth conditions varies in the range of 950-1100 o C and higher, though all the papers note a minor decrease of the growth rate due to the surface kinetic limitations (normally, less than an order of magnitude in a wide temperature range).…”

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confidence: 99%

Modeling analysis of AlN and AlGaN HVPE

Segal¹,

Bazarevskiy²,

Богданов³

et al. 2009

Phys. Status Solidi (c)

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Comprehensive model of AlN and AlGaN HVPE is developed. The model combines detailed description of the transport processes and quasi‐thermodynamic model of surface kinetics at the Al/Ga metal surfaces and AlN/AlGaN crystal surfaces. It is shown with the model that HCl dominantly converts into trichloride AlCl3 in the Al source but into monochloride GaCl in the Ga source. Then, AlN grows from AlCl3 under essentially non‐equilibrium conditions while GaN – from GaCl under near‐equilibrium conditions. The revealed differences between the AlN and GaN growth features explain many experimentally observed phenomena, including a sharp saturated behavior of the AlN growth rate in variation of the precursors flow rates and a strong effect of carrier H2 on the AlGaN composition. Generally, the model predicts a high sensitivity of the AlGaN composition to variation of the species flow rates due to their effect on the Ga incorporation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Growth of thick AlN layers by hydride vapor-phase epitaxy

Cited by 84 publications

References 16 publications

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Structure, optical spectra and biaxial stress of (0002) AlN epilayers grown on c‐sapphire by high‐temperature chemical vapor deposition

Modeling analysis of AlN and AlGaN HVPE

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Growth of thick AlN layers by hydride vapor-phase epitaxy

Cited by 84 publications

References 16 publications

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3

Structure, optical spectra and biaxial stress of (0002) AlN epilayers grown on c‐sapphire by high‐temperature chemical vapor deposition

Modeling analysis of AlN and AlGaN HVPE

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Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃