Thermodynamic analysis of AlGaN HVPE growth

Possibility of AlN growth using Li–Al–N solvent

“…Some research groups have succeeded in growing an AlN or AlGaN substrate to enable homoepitaxial-like growth of Al-rich AlGaN [1][2][3][4][5]. An Al(Ga)N template was successfully grown on a sapphire substrate by HVPE using AlCl 3 as the Al source [1][2][3][4].…”

Synthesis of AlN from Li3N and Al: Application to vapor phase epitaxy

“…Some groups are engaged in the fabrication of AlN substrates or AlGaN substrates to enable homoepitaxial growth of AlN [4][5][6][7][8]. Koukitu's group [4][5][6] successfully grew thick AlN and/or AlGaN layers on a sapphire substrate by HVPE using AlCl 3 as the Al source. On the other hand, Kamei et al [8] reported the achievement of AlN growth with low dislocation density by liquid phase epitaxy (LPE).…”

HVPE growth of Al Ga1−N ternary alloy using AlCl3 and GaCl

“…Prior to the HVPE growth of AlGaN, we have carried out a thermodynamic analysis of the AlGaN HVPE using AlCl 3 and GaCl as the group III precursors [15]. The analysis provides us useful information on the growth rate and the deposition composition for the preparation of AlGaN ternary semiconductors, as well as insight into the crystal growth mechanism.…”