Properties of (Al,Ga)As/GaAs heterostructures grown by molecular beam epitaxy with growth interruption

Properties of GaAs/AlGaAs quantum wells grown by MOVPE using vicinal GaAs substrates

“…These results on the effects of growth interruption by MOVPE on the linewidth are in contrast with those obtained by MBE (see Ref. [9]). We attribute this different behaviour to the smoother morphology of the QW heterointerfaces in our case, which is obtained by growing on vicinal substrates with a small misorientation.…”

“…For larger angles, the QW peak is broader and its linewidth at 0.61 becomes as large as that of the ''exactly'' oriented sample. Under our optimized conditions, the thinnest QW (2 nm thick) has the narrowest linewidth reported to date for similar heterostructures grown by MOVPE [8] and it has even a narrower FWHM than thin QWs (7 ML) grown by MBE [9] using a growth interruption. We find that the linewidth of the wide QW (15 nm) depends only weakly on the substrate misorientation.…”

Characterization of AlxGa1−xAs/GaAs heterostructures for single quantum wells grown by a solid arsenic MOCVD system

“…The three dominating nonradiative deep centers located at about 0.3, 0.5 and 0.8 eV below the conduction band critically reduce the luminescent efficiency. Additionally, when the growth temperature is increased the traps concentration is reduced [6,7]. Therefore, to reduce oxygen incorporation to the layers temperatures higher than 830 1C were chosen in growing the ternary alloys.…”

Output power enhancement of 100% for quaternary GaInAsSb/AlGaAsSb semiconductor disc lasers grown with a sequential growth scheme

“…GI time is usually 8 min and might increase up to 30 min depending on the adjustment of the In-cell temperatures which is varied in the range between 300 and 800 1C. The details of the growth interruption as well as associated advantages and disadvantages are discussed in [6] and in [7], respectively.…”