Output power enhancement of 100% for quaternary GaInAsSb/AlGaAsSb semiconductor disc lasers grown with a sequential growth scheme

Progress of optically pumped GaSb based semiconductor disk laser

“…The interruption during the epitaxial growth will lead an accumulation of Indium at the interfaces, which is detrimental to the emission performance of the GaSb based SDLs 24,25 . Manz et al 26 optimized the epitaxial growth procedure and obtained a high quality GaSb based SDL structure by using a modified sequential growth process. In this modified growth process, the DBR, active region and confinement layer of the SDL are all grown separately.…”

“…In addition, lateral lasing will be the other important limitation on the further power scaling in the GaSb based SDLs. It must be considered in the design of epitaxial gain element to suppress the transverse waveguide and later feedback 26 . In recent years, the research focuses of GaSb based SDLs are turning on the aspects of line-width narrowing and ultra-short pulse generation 45,46 .…”

Crecimiento de heteroestructuras de GaSb/GalnAsSb/GaSb por la técnica de Epitaxia en Fase Líquida

“…Por sus potenciales aplicaciones optoelectrónicas [1,2] como son las celdas termofotovoltaicas [3,4], fotodiodos, láseres semiconductores [5,6] y detectores, las heteroestructuras basadas en GaSb han sido objeto de estudio durante las últimas decadas y se han propuesto nuevas configuraciones con el fin de lograr una mejor eficiencia en los dispositivos b a s a d o s e n e ste m ate r i a l . Pa r t i c u l a r m e nte l a heteroestructura de GaSb/GaInAsSb/GaSb (Figura 1) sucitado un gran interés debido a que ha permitido mejorar notablemente la eficiencia cuántica de las celdas termofotovoltaicas [7,8,9,10].…”