Properties of GaAs/AlGaAs quantum wells grown by MOVPE using vicinal GaAs substrates

AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment

“…The small misorientation modifies the surface morphology of the GaAs substrate in a significant and controllable manner, with optimal QW optical properties observed on surfaces that exhibit the onset of the transition from step flow to step bunching, a feature peculiar of the MOVPE process and which has been associated with the surface diffusion and decomposition of the metalorganic precursors [ 22 ]. The resulting interfaces for the thick QWs, in the optimum case, show little influence on the photoluminescence linewidths, which strongly depend, on the other hand, on the unintentional background doping [14,23,24].…”

Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes

“…Previous work on the MOCVD growth of III-arsenide-and III-phosphide-based materials established that substrate misorientation can have significant effects on surface morphology [16], impurity incorporation [17], alloy composition [18], and photoluminescence (PL) spectra [18,19]. Initial studies on InGaN/GaN LEDs grown on free-standing m-plane substrates used nominally on-axis substrates [20].…”

Al[sub 0.22]Ga[sub 0.78]N∕GaN HFETs Prepared on Vicinal-Cut Sapphire Substrates

“…For heteroepitaxial growth of III-V semiconductor epitaxial layers, it has been shown that one can significantly enhance 2D step flow growth mode by using vicinal substrates. [9][10][11][12] Similarly, it has also been found that the number of threading dislocations can be effectively reduced by growing GaN epitaxial layers on vicinal-cut sapphire substrates. [13][14][15] In this study, we prepared GaN-based HFETs on vicinal sapphire substrates.…”