Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes

Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

“…[47][48][49] The substrate was provided by Mistubishi Chemical Corporation. The structure, in the direction of growth, consisted of a $1.2 lm template, a sacrificial MQW (3QW, 7 nm active region (A), 5 nm barrier (B), 415 nm emission wavelength (kÞ), 50 nm n þþ GaN, $770 nm n-GaN, an active MQW region (10QW, A3 nm, B1 nm, k ¼ 405 nm), a 5 nm p-Al 0.2 Ga 0.8 N electron-blocking layer (EBL), 56 nm of p-GaN, and a 14 nm p þþ GaN contact layer.…”

Progress in Nonpolar and Semipolar GaN-base Materials and Devices

“…As an example, substrate miscut is an important parameter to control growth mode and morphology. Through systematic studies, we have shown that m-plane growth morphology, and concomitant device performance, can be controlled by intentional miscut [1,2].…”

Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: Towards reduced photonic disorder

“…108, 251904 (2016) has been investigated, 18,19,21,45 can be the low growth temperature, which helps in preventing any interdiffusion between ZnO and ZnMgO thereby allowing for abrupt interfaces, and the insensitivity of the ZnO/ZnMgO surface features and roughness to the initial substrate miscut, which renders less critical the exact unintentional substrate miscut. 46 To conclude, we have introduced the growth of homoepitaxial nonpolar (10-10) monolithic ZnO/ZnMgO optical microcavities displaying flat surfaces and homogeneous Mg composition, even for micrometer-thick heterostructures. The possibility of stacking a large number of k/4 bilayers has enabled us to characterize optical microcavities with Qs in the order of 600 and displaying a photonic disorder one order of magnitude smaller than the state-of-the-art in wide bandgap microcavities, reducing the gap with the most developed GaAs-based microcavities.…”